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TI launches integrated 600V GaN FET power stage

High-voltage GaN FET and driver solution can reduce switching losses by as much as 80 percent

Texas Instruments (TI) has announced the availability of 600V GaN 70mΩ FET power-stage engineering samples, making TI the first semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution.

The LMG3410 is the first semiconductor IC to include GaN FETs manufactured by TI.

TI says that the 12A LMG3410 power stage coupled with TI's analogue and digital power-conversion controllers enables designers to create smaller, more efficient and higher-performing designs compared to silicon FET-based solutions.

These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications.

"With over 3 million hours of reliability testing, the LMG3410 gives power designers the confidence to realise the potential of GaN and to rethink their power architecture and systems in ways not feasible before," said Steve Lambouses, TI vice president of high-voltage power solutions. 

With its integrated driver and features such as zero reverse-recovery current, the LMG3410 can reduce switching losses by as much as 80 percent in hard-switching applications, according to TI. Unlike stand-alone GaN FETs, the LMG3410 integrates built-in intelligence for temperature, current and undervoltage lockout (UVLO) fault protection.

Key features and benefits of the LMG3410 include 50 percent lower power losses in a totem-pole PFC compared with state-of-the-art silicon-based boost power-factor converters. The reduced bill of materials (BOM) count and higher efficiency enable a reduction in power-supply size of as much as 50 percent.

GaN's zero reverse-recovery charge benefits new switching topologies, including totem-pole PFC and LLC topologies to increase power density and efficiency.

TI is also introducing new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48V to 1V point-of-load (POL) evaluation module, will include the new TPS53632G GaN FET controller, paired with the 80-V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92 percent in industrial, telecom and datacom applications.

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