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Monday 11th February 2008
Hermetic wafer-level packaging can cut the cost and weight of III-V MMIC protection and offer a route to combining different types of chip in a single compact module, say Patty Chang-Chien, Xianglin Zeng, Yun Chung and Jeff Yang from Northrop Grumman Space Technology.
Monday 11th February 2008
If you want p-type GaN with sharp p-doping profiles and low resistivity, then consider switching your carrier gas from hydrogen to argon, say Vladimir Dmitriev and Alexander Usikov from Technologies and Devices International.
Monday 11th February 2008
Photon recycling and quantum wells enhance single-junction solar cell efficiencies and will boost tandem cell performance to triple-junction levels, say Quantasol's Kevin Arthur and Keith Barnham.
Monday 11th February 2008
Ultra-high efficacy white-light sources can be built by carefully mixing efficient blue, green, yellow and red LEDs, say Sandia National Laboratories researchers. Richard Stevenson investigates.
Monday 11th February 2008
Conventional crystal growth methods don't work well for manufacturing GaN, but it is possible to produce small particles by electrolysis. With some minor changes this relatively fast process might be scaled to the manufacture of GaN substrates, says Sandia National Laboratories' Karen Waldrip.
Monday 14th January 2008
A major obstacle to solid-state lighting is so-called "droop" - the way that the efficiency falls at high drive currents. Its origins were unclear: until a recent spate of papers appeared, that is...
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Monday 10th December 2007
An entrenched position in the MOCVD equipment sector and the continued surge in demand for tools from LED manufacturers made Aixtron's stock one of the hottest investments in a tumultuous year on the exchanges.
Monday 10th December 2007
Six Sigma analysis has driven substantial cuts in Skyworks' photoresist consumption and has resulted in savings in excess of $450,000, according to Jens Riege.
Monday 10th December 2007
But can the industry's businesses save themselves as they compete with each other in a tight niche for limited sales to final consumers? Andy Extance was in Otsu, Japan, to document the aspirations and growing pains, as well as the latest research on show in this maturing field at ICSCRM 2007.
Monday 10th December 2007
TriQuint Semiconductor has united its HBTs and PHEMTs with a BiHEMT process that promises to integrate power amplifiers and antenna switches on the same chip, according to Tim Henderson.
Monday 10th December 2007
Micro-ring full-band tunable lasers can deliver fast and stable wavelength switching. This makes them the ideal candidate for next-generation networks employing optical packet-switching technology, say Shinji Matsuo and Toru Segawa from NTT Photonics Laboratories, Japan.
Monday 10th December 2007
Silicon has a history of driving GaAs out of key applications. Could it repeat that trick in handsets?
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Tuesday 4th December 2007
If you asked somebody at random to name a semiconductor company, the chances are most people would say: "Intel". Now, there aren't really any compound semiconductor companies that make for household names (yet), but if you had to pick the "Intel" of the GaAs world, there's a fair chance that you'd say: "RF Micro Devices".
Monday 3rd December 2007
Having exploited its number one position in power amplifiers to buy fellow GaAs high-flyer Sirenza, RFMD now has its money firmly on diversification. Andy Extance listens as the company calls the odds.
Monday 12th November 2007
Emcore has been winning multimillion dollar contracts for its terrestrial solar cells, modules and systems. Photovoltaics vice-president David Danzilio tells Richard Stevenson about the reasons behind this success and the advances that the company is making in its products for space applications.
Monday 12th November 2007
WIN has joined a select band of chip makers with its own BiFET technology. The H2W foundry process optimizes HBTs and PHEMTs independently, and it integrates power amplifiers, low-noise amplifiers, logic control and a power switch on a single chip, says Cheng-Kuo Lin.
Monday 12th November 2007
Despite photovoltaic conversion efficiencies recently reaching record highs, there is no shortage of ideas for further refinements, finds Michael Hatcher.
Monday 12th November 2007
Successfully shrinking a GaN HFET's dimensions can ramp up its operating frequency and open the door to applications such as 94 GHz radar, last-mile wireless communication and non-lethal weapons that disable opponents by heating their skin, says HRL's Brian Hughes and Michael J Keesling.
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Thursday 1st November 2007
Synthetic CVD-grown polycrystalline diamond has fantastic heat-conducting properties. Inserting a thin layer underneath a GaN HEMT can halve this transistor's operating temperature and substantially increase its maximum output power, says a team of researchers at California's Group4 Labs.
Monday 15th October 2007
With an Intel executive blogging about integrated III-V and CMOS functionality, and DARPA setting up a three-pronged attack on the same topic, it's time for compounds and silicon to get up close and personal. Michael Hatcher reports.
Monday 15th October 2007
A novel method for making native GaN has paved the way for Wang Nang Wang's high-power emitters and launch of a spin-off company. Richard Stevenson visits the University of Bath researcher.
Monday 15th October 2007
Fred Schubert and Jong Kyu Kim guide us through 100 years of the LED, before predicting where our most promising light source will take us over the next decade.
Monday 15th October 2007
Inverted metamorphic designs can boost the efficiency of conventional triple-junction solar cells, cut their weight and offer compatibility with flexible substrates, say Paul Sharps and Arthur Cornfeld from cell producer Emcore and Mark Wanlass from the National Renewable Energy Laboratory.
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