As announced earlier this month, optical component and materials maker
II-VI has licensed Silicon Carbide (SiC) technology from General
Electric with a view to move into power devices and modules. Just like
Cree/Wolfspeed and Rohm Group Company (including SiCrystal), the main
competitors of II-VI on the SiC wafer market, the new licensee aims to
capitalise on the growing market demand for SiC-based power electronics,
driven by the fast development of EV/HEV applications.
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have integrated their monolithically integrated GaN power ICs using PCB embedding technology as a half bridge circuit, including gate and DC link capacitors. The result is an extremely compact and efficient highly integrated voltage converter of the 600 volts class in a user-friendly package. The integrated functionality in the chip and all critical passive components on the package allow it to be used in a modular fashion, thus reducing the effort required for the development of future power electronic systems.
Lynred, a global leader in designing and manufacturing high-quality infrared HgCdTe and InGaAs technologies for aerospace, defense and commercial markets, and IRT Nanoelec, a technology research institute for microelectronics, today announce that Lynred has joined the Nanoelec consortium as a partner.
New IDTechEx report, “Materials Opportunities in Emerging Photovoltaics 2020-2040” predicts $38 billion dollars in 2040 without colliding with the silicon-in-glass “power station” business. There will be many opportunities for premium pricing of its new specialist materials.