+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
Thursday 13th May 2010
A revolutionary active region is the driver behind the record single-facet output powers emanating from Pranalytica’s quantum cascade lasers (QCLs). This advance will spur the launch of compact, lightweight, multi-watt, mid-wave infrared lasers, say the company’s Richard Maulini, Arkadiy Lyakh, Alexei Tsekoun and Kumar Patel.
Thursday 13th May 2010
A Swiss partnership between Colombo Bolognesi’s group at ETH-Zürich and Nicolas Grandjean’s group at EPFL have broken the speed record for AlInN/GaN HEMTs. When deposited on SiC, their devices can deliver a current gain cut-off frequency (fT) of 144 GHz, an extrinsic transconductance of 480 mS/mm and a maximum current density of 1.84 A/mm. Silicon offers a cheaper, but inferior foundation that leads to a fT of 113 GHz.
Tuesday 11th May 2010
Sapphire can form the bedrock for the growth of relatively thick, single crystal epitaxial films of rhombohedral SiGe. This material has much higher carrier mobility than single crystal silicon, and could spur the development of ultra-fast chipsets, say Yeonjoo Park and Sang Choi from NASA Langley Research Center.
Tuesday 11th May 2010
Philips Lumileds has gathered further evidence to support its claim that Auger recombination is the primary cause of LED droop, the decline in a device’s external quantum efficiency at higher drive currents.
Friday 7th May 2010
German scientist honored with “Fondation Louis D” award for stacking three different III-V single-junction cells on top of each other to achieve record efficiency
Thursday 6th May 2010
Optical switches need to consume less power, cut their footprint and speed up if they are to stand a good chance of serving tomorrow's optical networks and PC infrastructure. One way to realize all this and more is to turn to switches that employ micro-disk or photonic crystal lasers, according to a European Research team.
Wednesday 5th May 2010
Researchers from the Ferdinand-Braun-Institute in Berlin have developed a 11 W, 976nm distributed feedback (DFB) laser with a peak power conversion efficiency of 58 percent
Thursday 8th April 2010
LED developer Nichia has announced results regarding the development of more energy-efficient DUV LEDs.
Tuesday 30th March 2010
MBE product developer Riber has announced its annual results for last year.
Wednesday 24th March 2010
The annual results for IPG Photonics have been revealed.
Friday 12th March 2010
Aixtron has announced record results for 2009 and hopes to carry this momentum into the next 12 months.
Thursday 11th March 2010
A new report has highlighted some of the key issues that are likely to face the European LED market in the months ahead.
Tuesday 9th March 2010
EPC has announced the delivery of new GaN-Si power transistors.
Monday 8th March 2010
XsunX has announced it is close to commercial production of a new co-evaporation processing chamber for its solar panels.
Thursday 4th March 2010
Brighter, more powerful and longer lasting UV LEDs promise to offer a viable alternative to UV lamps used to purify air and water, treat skin diseases, aid forensic investigations and combat forgery. Dave Birtalan details the opportunities for a cost-effective, solid-state device.
Thursday 4th March 2010
Defense, medical, instrumentation and display markets are all hankering after affordable blue and green lasers based on a single semiconductor chip. Kaai aims to satisfy this demand with a portfolio of devices grown on semi-polar and non-polar planes. Richard Stevenson investigates.
Thursday 4th March 2010
Substrates sales will increase, argues AXT’s John Cerilli, thanks to the combination of increasing GaAs content in mobile products, a resurgent LED industry and the beginnings of a terrestrial concentrating photovoltaic market.
Thursday 4th March 2010
Switching from a simple quantum barrier to multiplayer variant can boost internal
Wednesday 3rd March 2010
Riber is set to provide new GaN products in the future.
Wednesday 3rd March 2010
Leading market analysts offer their take on the health of the GaAs, SiC, GaN and InP substrate markets, and predict how these sectors will evolve over the next few years. Richard Stevenson reports.
Tuesday 2nd March 2010
Manufacturer of sapphire substrates and optical windows, Rubicon has published its results for 2009.
Tuesday 2nd March 2010
Comparative studies have unveiled an LED architecture for realizing negligible droop: Employ a non-polar design with an electron blocking layer to abolish carrier spillover and a gallium-doped ZnO p-contact to eliminate current crowding, say a team of researchers from Virginia Commonwealth University and Kyma Technologies.
Monday 1st March 2010
Today’s GaN substrates are manufactured by a HVPE process that requires high temperatures and substantial reactor maintenance. Ammonothermal growth can address both these issues, while producing material with far fewer dislocations in a more efficient manner, says Ammono’s Robert Dwilinski, Roman Doradzinski and Marcin Zajac.
Friday 26th February 2010
First Solar has announced its quarterly results for the last three months of 2009.

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: