+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
Tuesday 11th March 2003
Compound Semiconductor magazine is pleased to acknowledge the support of its advertisers in the March 2003 issue.
Tuesday 11th February 2003
Compound Semiconductor magazine is pleased to acknowledge the support of its advertisers in the January/February 2003 issue.
Tuesday 4th February 2003
Last year was one of consolidation and contraction for the compound semiconductor industry, but also one that brought new opportunities. In our annual look at things to watch, Tim Whitaker and Jon Newey describe some of the likely developments in 2003.
Tuesday 4th February 2003
Results presented at last December's IEDM raised the bar for device performance, writes Tim Whitaker. Key announcements included a 350 GHz SiGe HBT, AlGaN/GaN FETs providing 2.3 W at 30 GHz and 100 Gbit/s logic ICs fabricated in InP-based HEMT technology.
Tuesday 4th February 2003
If you want to find out what techniques are used to manufacture all types of state-of-the-art compound semiconductor devices then CS-MAX is a good place to start, writes Jon Newey.
Tuesday 4th February 2003
A novel epitaxial layer transfer technology could provide the key to low-cost, wafer-scale integration of optical components, write William Waters and William Clark from Optogration.
Tuesday 4th February 2003
By taking advantage of the parallel computational capabilities of quantum bits, or qubits, quantum computers could effectively extend the reach of Moore's law for many decades to come.
Tuesday 17th December 2002
After settling its patent disputes with Osram and Toyoda Gosei, Nichia has now reached agreements with Cree and Lumileds that should prevent further litigation, writes Tim Whitaker.
Tuesday 17th December 2002
Wafer bonding of AlGaInP LED epilayers to silicon substrates using metallic interlayers results in very-high-power devices, write Pai Hsiang Wang and colleagues from United Epitaxy Company.
Tuesday 17th December 2002
Scribing sapphire or SiC wafers using UV lasers results in higher yield, higher throughput and reduced cost per die, according to Jongkook Park and Patrick Sercel of JP Sercel Associates.
Tuesday 17th December 2002
The International Conference on Mid-Infrared Optoelectronic Materials and Devices convened in Annapolis to discuss the latest advances in mid-IR lasers, LEDs and detectors that are eagerly anticipated for many new applications, writes Igor Vurgaftman.
Friday 8th November 2002
Equipment designed for use in high-throughput production environments can lead to a reduction in the overall test time for VCSELs, writes Jürgen Müller of Infineon Technologies.
Friday 8th November 2002
At Modulight, all the manufacturing steps and their supporting processes in product development and production have been integrated into a single relational database. The new system has led to an increase in productivity through better manufacturability and support for rapid decision making, write Seppo Orsila and colleagues.
Friday 8th November 2002
Within the entire life-cycle fab approach, efficiency engineering based on mass, energy and cost analysis identifies inefficiencies and other associated opportunities to reduce media consumption and disposal rates, according to P Giannoules and colleagues.
Friday 8th November 2002
Statistical process control is widely used for high-volume epitaxy, but as Paul Cooke and colleagues explain, care must be taken in the selection and measurement of the parameters.
Friday 8th November 2002
The manufacturing of GaAs ICs is a high-volume business, and as such is subject to the same production management techniques used in other industries. Roger Yin and colleagues describe the successful implementation of the KMTI model at GCTC.
Friday 8th November 2002
Failure mode and effects analysis provides a framework for rapid design and manufacturing implementation that has contributed to the successful launch of a new product suite by MetroPhotonics, according to Steven Martin and Bedwyr Humphreys.
Friday 8th November 2002
Hoping to emulate its past successes with GaAs, DARPA has launched a new initiative this year in an effort to make wide-bandgap semiconductors a cost-effective, high-performance electronic technology to fulfill the military's need for compact high-power devices, writes Jon Newey.
Friday 8th November 2002
Established silicon-on-insulator processes have helped CMOS to reach higher speeds. With new strained silicon processes on the silicon industry's roadmap, it was only a matter of time before somebody combined the new technology with a buried oxide, but at what cost?
Tuesday 8th October 2002
Handset manufacturers are hoping that a host of new models featuring cameras, color screens and multimedia messaging capabilities will result in strong shipment numbers towards the end of 2002. But if they're wrong, it may spell a new disaster for the supply chain, writes Tim Whitaker.
Tuesday 8th October 2002
Computer modeling of fluid dynamics has brought great benefits to those designing semiconductor equipment and processes. Jon Newey looks at an example of how modeling is being applied to the understanding of what happens during GaN epitaxy and how this relates to material quality.
Tuesday 8th October 2002
Increasing the speed of GaAs backside via etching is the current mission for manufacturers of dry etch tools. Young Cho and Jim Thomas of equipment manufacturer Tegal explore the new problems that high etching speeds bring, and suggest strategies for how they can be solved.
Tuesday 8th October 2002
The US Department of Defense is funding a project called SUVOS that aims to develop UV lasers and LEDs for biological agent detection and secret communication systems, writes Richard Dixon.
Tuesday 8th October 2002
The ubiquitous gate oxide material from the silicon industry, SiO2, has been successfully used to demonstrate GaN-based MOSFETs that rely on the properties of the GaN-SiO2 interface.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: