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Tuesday 29th April 2014
The gallium nitride on silicon carbide broadband transistor delivers 55 percent efficiency with 50 V operation over a DC-3500 MHz frequency range
Tuesday 29th April 2014
Researchers at the University of Illinois at Urbana-Champaign have used a printing process to assemble tiny cells into multilayer stacks for extraordinary levels of photovoltaic conversion efficiency
Monday 28th April 2014
Perhaps. In theory, controlling the grain boundary structure could help raise CdTe cell light-to-energy conversion efficiency closer to 32 percent
Monday 28th April 2014
The company says it is the first and only semiconductor industry outsourced process tool parts cleaner to participate in the programme
Monday 28th April 2014
The firm is confident it will be able to produce modules in the short term at a cost of €0.25 / Wp with its low-cost atmospheric deposition process and thus PV to power attractive market regardless of funding
Monday 28th April 2014
The firm has been shortlisted for its gallium nitride on silicon MaGIC LED technology
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Monday 28th April 2014
Electronic components made up of a layer of molybdenite superposed on a layer of silicon can produce light due to the the special properties of molybdenite
Friday 25th April 2014
Julian Styles is one of three experts joining the PEIC to drive the development of power electronics
Friday 25th April 2014
Market analyst Yole Développement says that GaN-on-silicon IP is advanced enough for mass production to commence
Friday 25th April 2014
The firm will concentrate on a number of topics including the advantages of GaN and Sic over silicon
Friday 25th April 2014
Tests have inicated that under halogen light and violet-pumped LED lights, the whiteness of cards (of varying whiteness) can be correctly assessed. On the other hand, the human eye cannot correctly differentiate whiteness when exposed to the most common type of modules used in LED lamps, blue pumped LEDs
Friday 25th April 2014
Produced by industry experts, EPC has posted an eleven-part series on the theory, design basics and applications for gallium nitride power transistors
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Thursday 24th April 2014
The new material system, 'Perkinamine Malachite', is based on the company's new proprietary multi-chromophore approach. It is claimed to increase thermal stability and durability in high speed fibre-optic telecom and optical computing devices
Thursday 24th April 2014
The compact III-nitride based device is suited to higher output intensity in space-constrained end products such as smartphones and tablets
Thursday 24th April 2014
New research has suggested that using interactions between sound waves and electrons reveal information about the environment of the electron. This discovery could have potential applications in quantum computing technology
Wednesday 23rd April 2014
Quarterly Net Income Increased 27% Year-over-Year to $28.2 million
Wednesday 23rd April 2014
Skyworks have reported 2nd Q results for the period ending March 28, 2014. Revenue for the quarter was $481.0 million, up 13 percent year-over-year.
Wednesday 23rd April 2014
MOU initiates feasibility study to bring Japanese CIS solar PV technology to U.S
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Wednesday 23rd April 2014
Researchers use zinc oxide coating to achieve higher efficiency from gallium arsenide solar cell
Wednesday 23rd April 2014
Intermolecular today announced that Epistar Corp. and Intermolecular have signed a multi-year extension of their existing collaborative development program and royalty-bearing IP licensing agreement to increase the efficiency and reduce the cost of Epistar's light emitting diode devices.
Wednesday 23rd April 2014
Continues to Accelerate Innovation Through Global Collaborations and Technological Breakthroughs in Nanoelectronics
Tuesday 22nd April 2014
Mitsubishi Electric Corporation announced today it will launch a 10.4-inch XGA, color TFT-LCD module for industrial equipment indicators, medical equipment, measuring instruments, instruments in ships and trains and other industrial applications. The new model offers a combination of 170-degree viewing angle (both horizontally and vertically), 1,000:1 high-contrast ratio, -30 to 80 degrees Celsius operating temperature range and 100,000-hour LED backlight. Mitsubishi Electric offices worldwide (http://www.MitsubishiElectric.com/semiconductors/) will begin selling the module on May 1.
Tuesday 22nd April 2014
Growing interest in GaN-on-silicon technology could ignite a battle over IP, warns Yole Developpement
Tuesday 22nd April 2014
Yole have released their “GaN-on-Si Substrate Technology and Market for LED and Power Electronics report. Details below:

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