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Thursday 3rd October 2013
At less than $10 for a 60W dimmable light bulb, Walmart and GE are bringing LED technology to the masses
Thursday 3rd October 2013
Anadigics’ indium gallium phosphide (InGaP) technology is utilised in the 802.11ac WiFi Front-End IC, ProEficient power amplifier, and HELP4 power amplifier
Thursday 3rd October 2013
The Harmonia lamp, based on the firm's III-nitride LED chips, has been honoured for its slim, sleek design and dual-sided illumination that can build light harmony in any surroundings
Thursday 3rd October 2013
Specifically designed for the commercial and residential markets, the cost optimised LEDs are based on the firm's Vero product line
Thursday 3rd October 2013
The EPC9017 development board features Enhancement Mode Gallium Nitride (eGaN) FETs in parallel operation using optimum layout techniques to increase current capability and efficiency
Thursday 3rd October 2013
The firm's latest gallium nitride based optical and base station modules enhance RF amplifiers
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Wednesday 2nd October 2013
Working with Rice University, a new funded program will leverage Daylight Solutions’ innovative imaging technology, and apply it to new methods for detecting cancer
Wednesday 2nd October 2013
The firm's X-Band Core Chip combines a CMOS logic driver with a gallium arsenide transmit/receive MMIC within a single QFN package
Wednesday 2nd October 2013
The firm has developed III-nitride LED technology to provide consumers with practical solutions that are accessible, flexible and intuitive
Wednesday 2nd October 2013
The roadmap to even higher efficiencies has also been revealed with an R&D demonstration module exhibiting 37.1 percent efficiency
Wednesday 2nd October 2013
The joint development of a PVB film for photovoltaic module encapsulation with AIST has led to superior long-lasting durability and a frameless, thinner design
Wednesday 2nd October 2013
A 1 µm diameter micropillar composed of a GaAs layer sandwiched between two 'Bragg stacks' made from alternating layers of GaAs and AlAs emits a single photon exactly at a desired moment in time
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Wednesday 2nd October 2013
The firm's bulb based on III-nitride chip technology has receives ENERGY STAR qualification and is now even more affordable thanks to utility rebates
Wednesday 2nd October 2013
The firm's silicon carbide (SiC) based enhanced SC³ technology platform drives performance up and system cost down
Wednesday 2nd October 2013
The market research firm says 2012 gallium arsenide device revenues hit $5.3 billion with additional growth anticipated in the immediate future. On the down side, a weak demand for MBE, and particularly MOCVD grown GaAs epitaxial substrates will adversely affect the device market in the longer term
Tuesday 1st October 2013
The firm's gallium arsenide (GaAs) based 850 nm infrared Dragon Dome LEDs will have a usable range of more than 100 metres, depending on the sensitivity and field of view of the camera
Tuesday 1st October 2013
The firm's source system features integrated heating and control useful in LED and solar cell growth
Tuesday 1st October 2013
The baSiC-T tool is suited for the growth of silicon carbide for high-performance electronics
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Tuesday 1st October 2013
The firm has shipped its QDEF devices to LCD manufacturers to bring perfect colour and high energy efficiency to millions of devices
Tuesday 1st October 2013
New low-heat, high-efficiency white lighting LD options could avoid the droop issue associated with LEDs
Tuesday 1st October 2013
Infineon has still maintained leadership in this sector
Monday 30th September 2013
The AURP has honoured Emcore for its III-v solar cell technology development
Friday 27th September 2013
The US Department of Energy has provided the funding to the firms to design power-saving GaN (gallium nitride) and SiC (silicon carbide) semiconductors for next generation vehicles

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