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Thursday 19th September 2013
The cash will be used to bring the gallium arsenide (GaAs) based Solink technology, to the next stage of development. The firm's high efficiency photovoltaic ink will increase efficiency of solar modules by up to 25 percent
Thursday 19th September 2013
The new gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications
Thursday 19th September 2013
The firm's latest silicon carbide power device is suited to power factor correction circuits, photovoltaic inverters and uninterruptible power supplies
Thursday 19th September 2013
The CXA high-density III-nitride based arrays enable the next generation of LED spot lights
Thursday 19th September 2013
The move to gallium nitride-on-silicon carbide is to reduce platform cost and address growth opportunities in power applications
Thursday 19th September 2013
The compact Osram III-nitride based LED is suited for automotive headlights now comes with two chips for greater brightness
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Thursday 19th September 2013
The wireless communications market accounts for a whopping 85 percent of the group's sales
Wednesday 18th September 2013
Etching a sacrificial GaN layer with oxalic acid boosts LED light extraction
Wednesday 18th September 2013
Cooperation between the firms will accelerate development of a cost efficient solution for large area ALD in the thin film PV & display market
Wednesday 18th September 2013
The integrated company will accelerate III-nitride LED technology development and market expansion
Wednesday 18th September 2013
The internally-matched gallium nitride-on-silicon carbide pulsed device provides high gain, efficiency and ruggedness over the 1030 to 1090 MHz bandwidth
Wednesday 18th September 2013
Tensile-strained germanium tin (GeSn) MOSFET devices on silicon have been developed using solid phase epitaxy
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Tuesday 17th September 2013
The firm says over the past two weeks many customers in multiple nations have said that Kyma has by far the best aluminium nitride templates on the market
Tuesday 17th September 2013
GaN Systems will explain how technology and trends in wide-bandgap gallium nitiride devices means smaller, lighter and more efficient electronics
Tuesday 17th September 2013
While cost may not be the advantage, its innovative character may lead to new insights of using silicon carbide as an optoelectronic material
Tuesday 17th September 2013
A novel etching method can make the surface of indium phosphide nanowires much smoother, and with fewer imperfections
Tuesday 17th September 2013
It is possible to improve the passivation of PbS QDs by using an optimised lithium fluoride thickness
Friday 13th September 2013
The aim is to develop and manufacture TeraXion’s new modulator series and covers its InP high-speed modulators for coherent transmission systems at 100 Gb/s and more
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Thursday 12th September 2013
The company's newest CPV module is certified to both IEC and UL standards
Thursday 12th September 2013
The market for phosphors and some of the critical IP are currently dominated by Mitsubishi and Denka, which have acquired nitrides and oxynitrides licenses from NIMS. But other players include Intematix, Beijing Yuji and Dow Electronics
Thursday 12th September 2013
The firm's latest gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion
Thursday 12th September 2013
The 8W plastic packaging power amplifier operating between the 5.2 - 5.9 GHz frequency band offers customers a small sized, fully matched solution
Thursday 12th September 2013
The indium phosphide (InP) provider of high-speed, mixed signal semiconductor solutions for the communications and computing markets has a new person on board
Thursday 12th September 2013
Oclaro will also receive $5 million for an option to sell amplifier and micro-optics business for $88 million

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