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Saturday 29th June 2013
Grown on a 6 inch silicon substrate, these LEDs are designed for solid state lighting applications
Thursday 27th June 2013
The gallium nitride based MBE grown devices developed by researchers have a PL efficiency as high as 77 percent
Thursday 27th June 2013
The company will use the cash to further develop its gallium arsenide (GaAs) based Solink technology which is currently claimed to increase solar module efficiency by up to 25 percent
Thursday 27th June 2013
Researchers have found that in-situ monitoring can provide vital information on the evolution of indium phosphide nanowire lengths and diameters during growth
Thursday 27th June 2013
This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original silicon-based wafer level packaging
Thursday 27th June 2013
After an extensive evaluation and competitive bidding, USCi chose Silvaco for its unique capabilities to enhance the research and development of its SiC power devices
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Thursday 27th June 2013
Revenue related to gallium nitride microelectronics is forecast to reach $334 million in 2017
Thursday 27th June 2013
Results show significant progress in developing a low-cost process technology to deposit III-Vs on top of silicon
Wednesday 26th June 2013
The new performance 70GHz silicon germanium oscilloscope series will offer improved signal fidelity to power high end test applications
Wednesday 26th June 2013
The settlement and royalty agreement related to IR's gallium nitride on silicon process for power devices ends litigation between the two companies
Wednesday 26th June 2013
The joint technology was chosen for its outstanding thermal performance, reduced costs and simplified supplier management and assembly
Wednesday 26th June 2013
The company's III-nitride new LEDs are suited to ceramic-metal-halide lighting applications
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Tuesday 25th June 2013
A new type of hermetic packaging for a GaN (gallium nitride) power amplifier will be utilised in the ESA satellite Proba-V
Tuesday 25th June 2013
The company's closing share price on 31st August 2012 was $30.46 and at the end of closing yesterday was $21.16
Tuesday 25th June 2013
The firm's InP (indium phosphide) based DTN-X platform was used to display Ethernet packet aggregation, VLAN switching, and transport of MPLS pseudo-wires with signalling of over 500G
Tuesday 25th June 2013
Devices using wide bandgap semiconductors, specifically silicon carbide and gallium nitride, will offer the greater competitive advantage in microinverters and small string inverters
Tuesday 25th June 2013
The firm's InP (indium phosphide) technology based PICs were named
Tuesday 25th June 2013
The firm is to withdraw from the magnetics sector due to EU legislation which is expected to come into force from 2017
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Monday 24th June 2013
The firm will now concentrate its efforts on gallium arsenide (GaAs) based integrated opto-electronic circuits
Monday 24th June 2013
Using MBE or MOCVD equipment, NASA Langley is seeking a facility for III-V semiconductor epilayer growth
Monday 24th June 2013
The copper indium sulphide modules have an efficiency of almost 15 percent - which is similar to polycrystalline silicon cells
Monday 24th June 2013
The organisation says the conversion efficiency of its InGaP/GaAs cell sets a world record for a two-junction solar cell measured under one-sun illumination
Friday 21st June 2013
Gallium arsenide MMICs have been used in the space pioneer's Mars campaign
Friday 21st June 2013
The firm's III-V multi-junction solar cells will be deployed to assess commercial geostationary telecommunications and scientific earth observation satellite missions

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