Info
Info
News search:

< Page of 592 >

News


Friday 21st June 2013
Gallium arsenide MMICs have been used in the space pioneer's Mars campaign
Friday 21st June 2013
The firm's III-V multi-junction solar cells will be deployed to assess commercial geostationary telecommunications and scientific earth observation satellite missions
Friday 21st June 2013
Using CIGS technology, the companies will unite to brighten up life for families living in the dark
Friday 21st June 2013
The room temperature tunnelling behaviour of boron nitride (BN) nanotubes has been demonstrated with the aid of gold quantum dots
Friday 21st June 2013
Analyst research firm IHS believes the total LED market for AlInGaP, GaN and other LED types will beat the $10 billion revenue reached in 2010
Thursday 20th June 2013
The firm believes its latest enhancment mode gallium nitride transistor demonstrates size reduction and efficiency enhancement for power conversion with high frequency switching
Info
Thursday 20th June 2013
The compact Pemtron SEM systems have been designed to bridge the gap between tabletop and full size tungsten SEMs
Thursday 20th June 2013
The firm's III-nitride LEDs have been awarded by automotive supplier, Yazaki North and Central America
Wednesday 19th June 2013
The firm's PlasmaPro 100 Sapphire can be used for etching III-nitride HBLED materials and is claimed to minimise cost of ownership and maximise yield
Wednesday 19th June 2013
In large-area exposure mode, the system can be used for surface annealing applications of semiconductors
Wednesday 19th June 2013
The firm says its commercial-size modules (1.09 square metres) have set a new CIGS efficiency record 15.7 percent
Wednesday 19th June 2013
The firm's concentrator triple-junction compound solar cell enables the efficient conversion of sunlight into electricity with a stack of three photo-absorption layers, the bottom most of which is made from indium gallium arsenide
Info
Tuesday 18th June 2013
The firm's indium phosphide (InP) devices have shown that reliability is critical as operators leverage PICs for cost-effective super-channel solutions to scale Intelligent Transport Networks
Tuesday 18th June 2013
The firm's III-nitride MicroSideled 3806 offers 15,000 hours of constant output for portable device displays
Tuesday 18th June 2013
The III-V semiconductor equipment provider has received stay of suspension pending a NASDAQ hearing
Tuesday 18th June 2013
The LED innovator in quantum dot down-converters for solid state lighting and displays has taken on a new board member
Monday 17th June 2013
EV Group (EVG), a supplier of wafer bonding and lithography equipment, and Dynaloy, LLC, an international manufacturer of chemicals for the electronics industry and wholly owned subsidiary of Eastman Chemical Company, today introduced CoatsClean™-an innovative single-wafer photoresist and residue removal technology designed to address thick films and difficult-to-remove material layers for the 3D-ICs/through-silicon vias (TSVs), advanced packaging, microelectromechanical systems (MEMS) and compound semiconductor markets. EVG state CoatsClean provides a complete wafer cleaning solution that offers efficiency, performance and cost-of-ownership (CoO) advantages compared to traditional resist stripping and post-etch residue removal methods.
Friday 14th June 2013
The firm is setting the standard with a breadth of offerings in III-nitride UV LEDs for industrial and specialty applications
Info
Friday 14th June 2013
The firm believes its Monolithic Microwave Integrated Circuit (MMIC) gallium arsenide based Integrated Circuits push the boundaries of robust GaAs technology
Friday 14th June 2013
The firm has been awarded for its affordable and effective gallium nitride RF based technology
Friday 14th June 2013
Anadigics’ compact indium gallium phosphide Pentaband device features high performance power amplifier chains. These enable operation in 21 different 3G and 4G frequency bands and band classes
Friday 14th June 2013
Thin film processes & materials for FEOL and interconnect applications will fuel the demand for the precursors
Friday 14th June 2013
GeneSiC believes its SiC (silicon carbide) 3300 V rating is a key differentiator for the high voltage generator market and will allow significant benefits
Thursday 13th June 2013
Osram Opto's pilot project

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info