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Thursday 22nd November 2012
The firm's nitride MJT series enables lighting manufacturers to deliver fixture level performance up to 100 lumens per watt. Also, the MJT series is designed on widely used 5630 and 3528 packages and improves compatibility with conventional dimmers
Wednesday 21st November 2012
The firm's indium phosphide (InP) based DTN platform will be used to bring together Europe's major business areas
Wednesday 21st November 2012
The RF device manufacturer has made leadership changes to enhance focus and drive its products forward
Wednesday 21st November 2012
The patent, regarding a green method of manufacturing II-VI quantum dots, will provide precise control of both QD shape and dimension during synthesis
Wednesday 21st November 2012
The III-V solar cells will be used in the 200 kilowatt system at Edwards Air Force Base in 2013
Tuesday 20th November 2012
The III-arsenide based laser is suited to soldering, heat treatment and thin metal welding as well as, scientific research applications like fibre laser pumping
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Tuesday 20th November 2012
The 3 x 2-inch CCS tool will be used to grow nitride R&D materials for light emitting sources, solar cells and sensors
Tuesday 20th November 2012
At a quantum yield greater than 80 percent, the II-VI dots are bright enough to be utilised as novel probes into not fully understood biological systems
Tuesday 20th November 2012
Using a novel molten droplet method to make lava dots out of zinc sulphide, cadmium sulphide and zinc selenide, hollow particles can exceed some performance metrics of quantum dots in a solar-cell test device
Tuesday 20th November 2012
The CIGS based EnerPlex Kickr IV allows consumers to transform the way they charge and use electronics in their everyday lives
Tuesday 20th November 2012
It is not yet known but Glancy Binkow & Goldberg LLP are on the case
Monday 19th November 2012
The rugged fault-tolerant design is optimised for large research-quality magnets
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Monday 19th November 2012
A new technique could potentially allow the fabrication of entire integrated circuits from graphene without the need for interfaces that introduce resistance
Monday 19th November 2012
Fraunhofer ISE has explored the limits of a new technology with gallium nitride power transistors
Monday 19th November 2012
The systems which are the subject of these transactions were delivered, accepted and paid for. The review focuses on determining whether revenue for these reactors was recognised in the appropriate accounting periods
Friday 16th November 2012
The producer of specialty metals such as indium, gallium and germanium used in MOCVD growth, has also acquired 100 percent of MCP Metals (Shenzhen) Co., Ltd gallium refining facility
Friday 16th November 2012
Having completed assembly of its CIGSolar TFPV solar cell system, the company is beginning to ready the system for customer demonstrations
Friday 16th November 2012
The two gallium nitride on silicon carbide modules are suited to weather radar and surface ship radar. S-band radar is also used in some communications satellites, especially those used to communicate with the space shuttle and the international space station
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Thursday 15th November 2012
The firm's silicon carbide Bipolar Junction Transistors are the first in its SiC product portfolio. They are claimed to offer the lowest total power losses at high operation temperatures
Thursday 15th November 2012
The firm's latest module utilises gallium arsenide HBT and pHEMT technologies for Smart Metering/Smart Energy applications
Thursday 15th November 2012
The wafer bonding tool should advance silicon carbide, gallium nitride and/or other CS technologies at Texas State University. The multifunctional tool can also be used for silicon based power devices
Thursday 15th November 2012
The Hyperion ion implanter technology will enable GT to produce thin silicon carbide, germanium, sapphire, silicon and other crystalline material substrates. GT believes this should enable breakthroughs in performance and cost for solar and power semiconductor applications
Thursday 15th November 2012
The firm's latest silicon carbide devices are optimised for high power, high voltage industrial applications
Wednesday 14th November 2012
The firm's new modules are produced using the firm's gallium arsenide MESFET technology. They are claimed to offer excellent ruggedness to provide industry-leading reliability

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