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Wednesday 13th June 2012
In this new position, Ploessl will work with Indium's global team of engineering, sales, operations, and R & D professionals to capitalise on the growth of LEDs, metal organic precursors, power storage systems, fibre optics, and next generation OLED displays
Wednesday 13th June 2012
The flexible thin-film solar cell and module CIGS manufacturer, is seeking to make solar the main source of power for world's commercial and industrial buildings, which consume 40% of electricity
Wednesday 13th June 2012
The system incorporates the firm's III-V compound semiconductor multijunction solar technology
Wednesday 13th June 2012
The firm's newest L-HOT MWIR tool, based on mercury cadmium telluride technology, offers thermal equipment makers power efficiency with no trade-off in detection range
Wednesday 13th June 2012
The system, which has automated wafer loading will be used to scan semiconductor wafer products including gallium arsenide and indium phosphide based materials. The tool has built in intelligence to enable repeatable and quantifiable object recognition to identify, categorise and record wafer features in real-time
Wednesday 13th June 2012
The new copper-moly-copper packages dissipate heat in gallium nitride, gallium arsenide and silicon carbide power devices
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Wednesday 13th June 2012
The MMIC gallium nitride-on-silicon carbide process using the new PDK will be demonstrated at a joint workshop. This will take place between 10am and 12pm on June 20th at the 2012 International Microwave Symposium in Montreal
Wednesday 13th June 2012
The firm claims its breakthrough gallium nitride technology platform provides twice the efficiency of conventional gallium arsenide solutions
Wednesday 13th June 2012
The new RFVA0016 amplifier for broadband applications incorporates RFMD's gallium arsenide HBT, indium gallium arsenide HBT and LDMOS technology
Tuesday 12th June 2012
The first Aixtron CRIUS II-XL Reactor will be used to set up a process for growing gallium nitride-on-silicon LEDs
Tuesday 12th June 2012
The new RFPA1012 gallium arsenide HBT linear power amplifier is specifically designed for wireless infrastructure applications
Tuesday 12th June 2012
Suitable for cellular infrastructure applications, the RF power innovator adds the efficiency, performance and bandwidth advantages of gallium nitride technology to its portfolio
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Tuesday 12th June 2012
The silicon germanium BiCMOS process was chosen over traditional gallium arsenide solutions due to its ability to operate in the 12GHz to 15GHz band. What's more, the process allows multiple analogue and digital functions to be integrated into a single chip
Tuesday 12th June 2012
Together, they will advance gallium nitride power devices for the development of high-power-density converters operating at temperatures of up to 300°C
Tuesday 12th June 2012
The company intends to continue developing the POET platform which enables monolithic fabrication of integrated circuit gallium arsenide devices on a single wafer
Tuesday 12th June 2012
The pioneer of blue/white gallium nitride-based LEDs on silicon substrate says it is creating the opportunity for a sharp reduction of LED lighting prices
Tuesday 12th June 2012
A new material should enable even higher resolutions, lower power consumption, and higher performance touch screens, as well as narrower bezel widths for LCD display panels used in mobile devices such as smartphones
Monday 11th June 2012
The firm's flexible sheets of high efficiency gallium arsenide based solar cells enable adaptable form factors
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Monday 11th June 2012
The physicist was awarded for her work on gallium indium phosphide / gallium arsenide solar research
Monday 11th June 2012
The American region and the Asia Pacific region (APAC) have an even market share this year. However, the APAC region is forecast to expand at a faster pace
Monday 11th June 2012
The new cost-effective gallium arsenide CATV products simplify RF connectivity and are claimed to reduce BOMs & improve performance
Monday 11th June 2012
The firm will provide its cadmium telluride modules to AGL Energy
Monday 11th June 2012
The joint venture will leverage Intermolecular's high productivity combinatorial platform towards achieving higher cadmium telluride solar panel efficiencies
Friday 8th June 2012
The German firm expects to own the largest cadmium telluride solar module facility in Europe by the end of 2012

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