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Tuesday 11th October 2011
The firm says the results of this project can be extended to all the wavelengths in the aluminium indium gallium phosphide (AlInGaP) range to boost efficiency.
Tuesday 11th October 2011
The compact spectrometer can support a broad range of applications in multiple industries including compound semiconductors.
Tuesday 11th October 2011
The Chinese firm will use one of the two reactors to produce 4” arsenide and phosphide based LED materials and the other to produce 4” silicon carbide based epiwafers.
Monday 10th October 2011
The provider of materials, including those used in silicon germanium chip production, that enhance the performance of compound semiconductor chips and solar cells is expanding.
Monday 10th October 2011
Sparton says it has the capacity to be the 7th largest primary producer of
Monday 10th October 2011
The firm’s growth partly to large design wins across markets including smartphones, tablets, 3G/4G base stations, optical networks and cable systems.
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Monday 10th October 2011
The firm will present results on its III-V, silicon germanium and E-GaN products.
Monday 10th October 2011
The silicon germanium devices open new avenues in wireless communications and imaging.
Monday 10th October 2011
The earth observation military satellite contract increases Sofradir’s achievements in supplying state-of-the-art IR detectors based on mercury cadmium telluride technology, for space applications.
Friday 7th October 2011
The firm says it has recently received a lot of interest from South Korean companies regarding its CIGS products.
Friday 7th October 2011
The firm has been acknowledged for eliminating banned or controlled hazardous materials and promoting the use of environmentally friendly materials.
Friday 7th October 2011
The firm has strengthened its compound semiconductor materials business to cope with demand for high frequency devices which use gallium arsenide and gallium nitride epiwafers.
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Friday 7th October 2011
The firm is looking to increase its market share in LED based technologies and light management systems.
Friday 7th October 2011
Designed for use in solar micro inverters, the silicon carbide based TO-252 D-Pak devices are now available in 2A, 5A, 8A & 10A ratings.
Thursday 6th October 2011
The solar cell manufacturer, which uses III-V semiconductors in some of its products, will aid development in energy and the environment.
Thursday 6th October 2011
The plasma enhanced atomic layer deposition system can be used in a variety of applications including compound semiconductor growth.
Thursday 6th October 2011
The semiconductor expert takes responsibility for worldwide opto component production.
Thursday 6th October 2011
Deloitte Technology Israel Fast 50 has acknowledged the company which manufactures X-ray equipment used to characterise gallium arsenide, gallium nitride and indium phosphide wafers.
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Thursday 6th October 2011
The low profile modules which feature a silicon carbide Schottky diode are designed for use in high frequency applications.
Wednesday 5th October 2011
Using a non-vacuum printed process, the firm says it has raised the bar for efficiency and cost savings.
Wednesday 5th October 2011
The indium gallium phosphide VCOs deliver low phase noise, a wide tuning range and low current consumption.
Tuesday 4th October 2011
The new engineering plant in Holland will support new research and development projects in spectroscopy.
Tuesday 4th October 2011
In addition to metalorganic CVD precursors, the new business will supply photoresists, related ancillaries for lithographic processing, and pads and slurries for CMP – all of which are used in the manufacture of LEDs.
Tuesday 4th October 2011
The new entity extends RFMD's gallium nitride and arsenide expertise into high-growth non-RF markets.

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