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Thursday 18th August 2011
The company will debut its latest NIR indium gallium arsenide spectrometers at SPIE’s Optics & Spectrometers conference.
Wednesday 17th August 2011
Strategy Analytics says that LED manufacturers are improving market penetration by increasing the functionality of their products and making them easier for consumers to use.
Wednesday 17th August 2011
The firm’s second generation gallium nitride based power transistor delivers high frequency switching with enhanced performance at 200 V and 100 milliohms.
Tuesday 16th August 2011
The company says increased trading transparency and more prominent access through the U.S. broker-dealer will enhance value for shareholders.
Tuesday 16th August 2011
Jim Brown has replaced Meyerhoff as President of the Utility Systems Business Group of the cadmium telluride solar cell manufacturer.
Monday 15th August 2011
The firm’s HELP4 LTE power amplifier, which uses indium gallium phosphide technology enables the LG Android smartphone.
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Monday 15th August 2011
IMS Research has lowered its 2011 gallium nitride MOCVD forecast by 24% to 833 reactors, which still represents 4% growth over 2011. In 2012, China is expected to continue to dominate the market for GaN MOCVD tools, market, but shrink to 61% in Q4’12 as Taiwan and Korea rebound.
Monday 15th August 2011
TFG Radiant Group of China and Ascent Solar intend to build the first non-U.S. and largest CIGS FAB using Ascent's technology.
Sunday 14th August 2011
The additions of Rob DeLine and Paul Apen should enhance the growth and industry advancement of MiaSolé’s strategic approach to growth in CIGS commercialisation.
Sunday 14th August 2011
The firm’s annual revenue has increased by 14% and annual net income was $147 million.
Saturday 13th August 2011
The producer of purified metals including gallium, germanium, indium, selenium and tellurium used in compound semiconductor wafers will use the new credit facility to refinance existing indebtedness, capital expenditures and growth opportunities.
Friday 12th August 2011
Gallium nitride epitaxial wafer production capacity in China will grow over 300% in just 2 years (2010-2012).
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Friday 12th August 2011
The firm has unveiled the TENUIS GEN 2 process system for CIS and CIGS modules which is claimed to offer significant cost advantages in the application of buffer layers on thin film solar cells.
Thursday 11th August 2011
Patlite announce two LED light towers that are FM approved for Class 1, Zone 1 and Zone 2, AExd IIC T6.
Thursday 11th August 2011
Suited to CATV Infrastructure applications, the firm’s new gallium arsenide based 8.0 V, 20.5 dB gain amplifier is configured as a pair of cascade structures and claimed to have excellent broadband performance.
Thursday 11th August 2011
The PV-480 tool, which uses nozzle-less ultrasonic spray head technology for a more uniform and repeatable coating deposition, will be used to improve overall cell efficiency.
Wednesday 10th August 2011
The performance gap between conventional LEDs and those built on silicon is closing fast thanks to the efforts of Bridgelux
Tuesday 9th August 2011
The company says its new name GT Advanced Technologies is now more closely aligned with its strategic vision and provides a new platform for it to grow and strengthen its global brand in markets such as LEDs
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Tuesday 9th August 2011
The indium aluminium gallium arsenide / indium phosphide microlasers have achieved continuous-wave (CW) electrically injecting single-mode-operation at room temperature.
Tuesday 9th August 2011
For design engineers and manufacturers, this means faster access to Cree’s LED lighting solutions and silicon carbide power products on a global basis.
Tuesday 9th August 2011
Gerard Lighting Group is also investing $3 million in Illumitex as part of the LED company’s latest round of private equity funding.
Tuesday 9th August 2011
The LED giants will present at the 12th annual conference which takes place on October 24-26 in San Diego, California.
Tuesday 9th August 2011
The company is developing 8-inch commercial grade performance for gallium nitride-on-silicon based LEDs.
Monday 8th August 2011
Scientists say they have shown that neither direct nor indirect Auger recombination are the primary cause of droop in indium gallium nitride quantum wells.

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