The provider of next generation telecommunications network solutions has said that the level of cooperation and support demonstrated by Anadigics during a critical period in its manufacturing process was significant in ensuring success in the wireless handset market.
Scientists will measure the performance, reliability and thermal stability of different types of solar cells, including CIGS and use electroluminescence, photoluminescence and thermography in characterisation.
At this year’s meeting, the firm saluted its gallium arsenide POET technology, which is focused on increasing the speed and decreasing the energy usage in the general purpose server, desktop and laptop microprocessor markets for consumer applications.
The manufacturing facility for gallium arsenide based multi-junction photovoltaic systems is being financed by a combination of $5 million in Recovery Act tax credits and $12 million in private funding.
The new high-efficiency PA modules based on gallium indium phosphide / gallium arsenide HBT technology are ideal for embedded WLAN applications requiring small size, high efficiency and low battery-voltage operation.
The firm’s new low noise amplifiers provide flexible, highly-efficient linear solutions for mobile network base stations, repeaters, point-to-point radios, test and other high-performance applications.
The new TMGa production plant, to be completed in 2012, will be three times the size of the existing unit. The second facility for TMIn manufacture will increase capacity by 400 % and should be completed by Dec 2011.
Using indium gallium nitride on a silicon substrate, novel etching, layout and thermal management strategies, researchers have produced much smaller and lower temperature LEDs than current LEDs using the same electrical power.
Since its purchase of 6 CRIUS 31x2-inch reactors last November, AquaLite is seeing a stronger demand for power chip gallium nitride based LEDs and is looking to the 55x2-inch CRIUS II to increase throughput.
The firm is looking to develop the next generation of power electronics and offer design engineers silicon carbide devices which have zero reverse recovery loss, temperature-independent switching losses and higher frequency operation.