Kyma Technologies, Inc., supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, released the following statements in response to a feature article that was published in Compound Semiconductor on March 1, 2010, entitled “Bulk GaN: Ammonothermal Trumps HVPE.”
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today it is teaming with Ember Corporation to introduce ZigBee front end modules (FEMs) for smart grid applications that give utilities and consumers more control over how they monitor and save energy.
Sumitomo Electric Industries, Ltd., a provider of optical components and modules, and Anritsu Company, a global leader in optical test solutions, will be conducting a joint 40Gb/s technology demonstration in Anritsu’s booth – #3140 – during OFC/NFOEC 2010.
Inphi Corporation, a high-speed analog semiconductor company, today introduced its 4336TA Transimpedance Amplifier (TIA) for next-generation Small Form-Factor 40 Gbps Very Short Reach (VSR) transponder modules.
Thanks to rapid growth in the high-end server, notebook, mobile handset and wired communication segments, the Gallium Nitride (GaN) power management semiconductor market is expected to reach $183.6 million in revenue in 2013, up from virtually nil in 2010, according to iSuppli Corp.
AIXTRON AG today announced an order from its long-time customer, Fraunhofer Institute for Applied Solid State Physics (IAF) located in Freiburg, Germany. IAF has ordered one AIX 2800G4 HT, 11x4 inch MOCVD tool which it will be using for GaN on SiC for high power, high frequency applications to enable commercialization of GaN devices in the near future.