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Company News


Wednesday 2nd June 2010
A new 4G filter technology has been launched by TriQuint Semiconductor.
Wednesday 2nd June 2010
PlasmaPro NGP 80 offers RIE, PECVD, ICP & RIE/PE for III-V etch processes suited to R&D and small-scale production.
Wednesday 2nd June 2010
Rubicon Technology Executives will give a presentation at the ‘Credit Suisse Future of Energy Conference 2010’ in Washington, DC.
Wednesday 2nd June 2010
The Front End Module (FEM) integrates 2.4-2.5 GHz and 4.9-5.85GHz bands and is claimed to combine superior integration for use in mobile computing.
Wednesday 2nd June 2010
Company Executives will present at ‘UBS Global Technology and Services’ Conference in New York, on Tuesday, June 8, 2010, at 9:00 am Eastern Time.
Wednesday 2nd June 2010
New high-voltage GaN chips developed by Integra.
Wednesday 2nd June 2010
The MOCVD systems will be used for high brightness LED production.
Wednesday 2nd June 2010
The company says there has been a significant increase in requests for quotes on HCPV solar panels and ground-based and rooftop tracker systems since late 2008.
Tuesday 1st June 2010
Low Band Transmitter (LBT) designed to protect strike aircraft, ships, and ground troops by disrupting enemy radar and communications will aid US operations.
Friday 28th May 2010
Oclaro has announced a $7.5 million investment in ClariPhy.
Friday 28th May 2010
Riber has completed the sale of one of its products to an unnamed vendor.
Friday 28th May 2010
Unlike other THz diodes, this Schottky diode can be integrated with other passive components and eliminates unwanted parasitic elements from the wire bond
Thursday 27th May 2010
Skyworks has announced design wins from MediaTek in support of dual and quad band platforms targeting low-cost handsets.
Thursday 27th May 2010
The 31 x 2” MOCVD systems will enable LDX (LongDeXin) to satisfy the GaN-HB-LED market for use in backlights.
Thursday 27th May 2010
The 18W and 30W products will be used in power amplifiers for microwave radios with the 30W GaAs FET providing 2x higher output power than its predecessor.
Wednesday 26th May 2010
This Gallium Nitride-on-silicon technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance.
Wednesday 26th May 2010
Microwave power MMIC is suited to RF-Microwave Pre-Amplifier Applications and supports C-band frequency from 5.65 to 8.50GHz
Wednesday 26th May 2010
High-Linearity Digitally-Controlled Variable Gain Amplifiers (DVGAs) suited to wireless infrastructure applications such as cellular base stations.
Wednesday 26th May 2010
The 3 high gain 16W GaAs FETs ranging from 6.4 – 8.5 GHz are suitable for microwave radios and solid-state power amplifiers (SSPAs). They will be exhibited at the 2010 IEEE MTT-S International Microwave Symposium, May 25 – 27 in Anaheim, California.
Wednesday 26th May 2010
The G-2000 green laser is claimed to offer the highest commercially available performance in optical power, efficiency, and bandwidth making it suitable for microprojectors.
Wednesday 26th May 2010
Next-Generation Ultra Low-Noise Amplifiers (LNAs) will meet demanding noise and linearity requirements for multiple wireless infrastructure applications.
Wednesday 26th May 2010
At the ‘Investors at Barclays Capital Global Communications, Media & Technology Conference,’ RFMD revised its guidance and said it expects to achieve a positive net cash position in 2010.
Wednesday 26th May 2010
As the balance sheet improves, the firm announced that 2.1 million shares will not need to be diluted.
Tuesday 25th May 2010
As applications for Rectangular Gate Valves keep getting larger, KJLC is meeting the demand for the wider rectangular valve openings commonly used for semiconductor processing, solar panels, LCD/flat panel, and other vacuum coating applications.