GT Advanced Technologies is a manufacturer of high-performance crystal materials including silicon carbide (SiC) and sapphire. GTAT’s corporate headquarters in Hudson, New Hampshire also serves as the Company’s primary manufacturing facility for its CrystX® silicon carbide. This material is fundamental to the production of semiconductors used in electric vehicles and other power electronics applications. Silicon carbide is extremely efficient, outperforming silicon-based devices while reducing weight, heat, and complexity in all applications that use the material. GTAT is producing its high-quality, wafer-ready CrystX® silicon carbide in volume to meet rapidly growing market demand. For aerospace, defense, and high-power laser applications, GTAT also produces ultra-pure, large-format HEM® sapphire material. Sapphire is widely regarded for its optical properties and homogeneity, and GTAT is now producing sapphire boules that reach sizes and quality levels unobtainable elsewhere. This allows for greater economy of scale since many valuable parts can be fashioned from one of these boules.