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GaNrich rolls out 40-1200V GaN power portfolio

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Taiwan-based GaN-on-Si and GaN-on-Sapphire firm, announces full-range capability

Taiwan-based GaNrich Semiconductor, has announced the establishment of GaN-on-Si and GaN-on-Sapphire wafer platforms.

The six year old company says it is one of the few suppliers globally supplying full voltage range GaN product coverage, and currently the only GaN designer who can provide mass production GaN product for customer validation in Taiwan.

Its portfolio spans 40V–250V low-mid voltage and 650V–1200V high voltage GaN power devices, serving applications including AI data centres, Backup Battery Units (BBUs), robotics, drones, electric vehicles (EVs), and On-Board Chargers (OBCs).

For 40V–250V GaN power devices, GaNrich says it is targeting applications where traditional silicon devices have reached their performance limits. In addition, by integrating gate drivers into the same package, GaNrich can accelerate customer product adoption by simplifying circuit design.

650V–1200V GaN power devices of GaNrich address high-voltage power-conversion applications including high-power AI data centre power supplies, AC-DC conversion, and EVs. The company says it can provide GaN device solutions tailored to different power topologies from low-mid voltage DC-DC/DC-AC conversion to high voltage AC-DC/DC-DC conversion. It can also offer pin-to-pin drop-in replacements for traditional silicon components.

GaNrich says it also plans to launch a 1200V bidirectional switching (BDS) product that can reduce system component count while increasing voltage design margin.

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