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Technical Insights


Tuesday 28th October 2003
The ability to manipulate all thermal, mechanical and chemical variables is crucial in developing a high-yield lift-off process, according to Mehran Janani, James Thietje and colleagues.
Tuesday 14th October 2003
Now in its 25th year, the GaAs IC Symposium once again promises to cover the latest advances in high-frequency and high-speed compound semiconductor circuits and technology.
Tuesday 23rd September 2003
There are strong opportunities for growth in the SiC market, particularly in electronic applications, provided that material quality continues to improve. Philippe Roussel of Yole Developpement reports.
Tuesday 23rd September 2003
SiC has evolved from being a laboratory curiosity to being a useful material for wide-bandwidth, high-power devices. Scott Allen and Jim Milligan of Cree describe the latest developments.
Tuesday 23rd September 2003
After working wonders for the US GaAs substrate industry in the 1990s, the Title III program has been attempting to do the same for SiC substrates, as Jon Newey describes.
Tuesday 23rd September 2003
The recent drop in demand for InP-based devices means that less indium is being consumed by the semiconductor industry, yet indium prices have risen sharply. Thomas Jansseune explains why.
Tuesday 23rd September 2003
Compound Semiconductor magazine is pleased to acknowledge the support of its advertisers in the September 2003 issue.
Tuesday 19th August 2003
The III-nitrides are a growth area for compound semiconductors, and recently there has been rapid progress in performance and the variety of devices available. Richard Balmer reports from Nara.
Tuesday 19th August 2003
The high breakdown voltages inherent in GaN HFET technology make it well suited to high-voltage operation in wireless infrastructure applications, according to Ricardo Borges, Jeff Brown, Allen Hanson, Sameer Singhal, Andrei Vescan and Paul Williams of Nitronex Corporation.
Tuesday 19th August 2003
Recent AlGaN development work in the laboratory will help to shape the future market for a variety of devices, according to David Gotthold and Shiping Guo from Emcore.
Tuesday 19th August 2003
Emissivity-corrected pyrometry in conjunction with spectroscopic reflectance can improve the reproducibility and efficiency of GaN epitaxy, according to Kolja Haberland and colleagues.
Tuesday 19th August 2003
MetroPhotonics has developed active and passive InP-based components manufactured using the approach of vertical monomode integration, write Bedwyr Humphreys and Adrian O'Donnell.
Tuesday 19th August 2003
Friday 1st August 2003
Compound Semiconductor magazine is pleased to acknowledge the support of its advertisers in the August 2003 issue.
Tuesday 15th July 2003
While new processing technologies ensure that InP microelectronics will keep getting faster, new compounds are displacing InP as the material of choice for some long-wavelength lasers, writes Jon Newey.
Tuesday 15th July 2003
LED-based lighting systems received numerous awards at the recent LightFair International trade show, demonstrating the importance of LEDs to lighting designers, writes Kate Conway.
Tuesday 15th July 2003
Despite temperatures of over 100 ºF and several no-shows due to the effects of SARS, the attendees at this year's Mantech conference enjoyed a high-quality program covering GaAs and InP manufacturing technology, as well as wide-bandgap devices and the threat posed by silicon.
Tuesday 15th July 2003
There is far more to an optical receiver than just the APD or pin diode - consideration of the surrounding components is crucial to good receiver performance, writes Joe Boisvert.
Tuesday 15th July 2003
Compound Semiconductor magazine is pleased to acknowledge the support of its advertisers in the July 2003 issue.
Tuesday 15th July 2003
During 2003, Aixtron celebrates its 20th year as a leading equipment supplier to the compound semiconductor industry.
Monday 30th June 2003
The increasing use of via holes and other 3D features is posing a challenge to conventional resist technologies. Henry Hendriks, James Tajadod and John Klocke describe a solution.
Tuesday 17th June 2003
New materials such as SiGe and strained Si are the key to extending silicon's reach and ensuring that the CMOS industry can prosper. But just as SiGe threatens GaAs, developments in CMOS are encroaching on SiGe's territory, writes Jon Newey.
Tuesday 17th June 2003
There is still plenty of room for improvement to the SiGe bipolar processes that are now being used by many RFIC manufacturers. Ted Johansson and Johan Pejnefors describe a process that overcomes some common problems with the base layer epitaxy.
Tuesday 17th June 2003
White LED makers are making strides to improve the color consistency, white light quality, lifetime, efficiency and cost of their products, writes Tim Whitaker.

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