< Page of 83 >

Technical Insights


Friday 2nd July 2010
The collaboration has achieved record efficiencies with established GaAs RF Devices by using accurate harmonic tuning.
Thursday 1st July 2010
InSbN photovoltaic infrared detectors offer a promising alternative to the HgCdTe incumbent by combining superior material quality with lower Auger recombination and a range of fabrication techniques.
Tuesday 29th June 2010
The output power of deep ultraviolet LEDs needs to rise if these devices are to be employed for water and air purification and polymer curing. One way to realize this is to turn to lamps that offer a far larger emission area, according to Asif Khan, Qhalid Fareed and Vinod Adivarahan from the University of South Carolina and Nitek.
Thursday 24th June 2010
Silicon offers a large, low-cost platform for making nitride LEDs, but realizing high quality epitaxy is tough due to the stress between the two materials. However, it is possible to produce the crack-free, low-defect-density films demanded by high-power LEDs by turning to a patterned substrate and a multi-layer buffer, says Lattice Power Corporation.
Thursday 24th June 2010
A team of researchers at the Chinese Academy of Sciences has built the first square microlasers featuring output ports on opposite corners.
Monday 21st June 2010
The shrinkage of the fundamental bandgap near the surface of InAs and other compound semiconductors could offer a new route in bandgap engineering.
Monday 21st June 2010
Anadigics has packed an awful lot into its first 25 years: it has experienced the highs of pioneering 4-inch GaAs production and leading high-volume manufacturing of power amplifiers for handsets; but it has also suffered from the lows of dealing with unsustainable losses and losing market share to superior chip technology. Richard Stevenson tells the company’s story.
Monday 21st June 2010
Scientists at West Virginia University have obtained experimental evidence of phase separation in AlInGaN layers with a few percent aluminum and indium.
Monday 21st June 2010
Researchers at the University of California, Santa Barbara (UCSB) and Mitsubishi Chemical claim to have uncovered a superior semi-polar plane for making green lasers.
Thursday 17th June 2010
Strong sales of LED backlit screens and mobile devices have led to substantial gains in the share prices of many III-V chipmakers over the last year. Richard Stevenson reports.
Wednesday 16th June 2010
A team of French researchers claims that it has fabricated the first GaAs/AlGaAs quantum cascade detector (QCD) capable of operating at very long infrared wavelengths.
Tuesday 15th June 2010
GaAs and GaN technologies can spur high-quality delivery of advanced video, data and telephony services to the home, says TriQuint’s Chris Day.
Monday 14th June 2010
Scientists at the Eindhoven University of Technology based in the Netherlands have developed a new process which combines all the process steps needed in creating a Photonic Integrated Circuit (PIC)
Friday 4th June 2010
The device has a “space cavity” and is claimed to offer the Highest-Performance Ultra-Low-Noise Transistor for use in image sensors deployed in anti- terrorism applications.
Thursday 27th May 2010
Combining a metallic foundation with a vertical current path creates an LED that prevents current crowding, realizes excellent thermal management, and delivers the high efficacies and long lifetimes needed for general illumination, says SemiLEDs’ Trung Doan.
Thursday 27th May 2010
A UK start-up is claiming to have developed a novel device treatment technology that paves the way for the manufacture of brighter, lower-cost LEDs. Richard Stevenson investigates.
Tuesday 25th May 2010
Particles found in graphene could hold the key to the material's development as a basis for next-generation photonics research.
Tuesday 25th May 2010
Companies seek to constantly improve their production methods. HBLED manufacturers are faced with many challenges including vacuum and abatement. Mike Czerniak, Product Marketing Manager, Exhaust Gas Management at Edwards discusses the benefits of combustion based abatement technology.
Tuesday 25th May 2010
Scientists from the University of Texas at Austin have broken the channel mobility record for an inversion-type/accumulationtype III-V MOSFET.
Thursday 20th May 2010
LED manufacturers seek new methods to reduce manufacturing costs and improve productivity in an increasingly demanding market. Tom Pierson, Ranju Arya, Columbine Robinson of KLATencor Corporation discuss how epitaxy process control can result in improved MOCVD uptime and overall yield. Challenges that can be assisted with inline inspection techniques.
Tuesday 18th May 2010
Tawian’s LED industry has weathered the global economic storm, and it is now recovering fast thanks to increased deployment of this chip in street lighting and display backlights. The Photonic Industry and Technology Development Association (PIDA) details the transformation.
Tuesday 18th May 2010
Japanese researchers have developed a complex electron-blocking region that can increase electron injection and deliver a massive hike in ultraviolet LED output.
Thursday 13th May 2010
A revolutionary active region is the driver behind the record single-facet output powers emanating from Pranalytica’s quantum cascade lasers (QCLs). This advance will spur the launch of compact, lightweight, multi-watt, mid-wave infrared lasers, say the company’s Richard Maulini, Arkadiy Lyakh, Alexei Tsekoun and Kumar Patel.
Thursday 13th May 2010
A Swiss partnership between Colombo Bolognesi’s group at ETH-Zürich and Nicolas Grandjean’s group at EPFL have broken the speed record for AlInN/GaN HEMTs. When deposited on SiC, their devices can deliver a current gain cut-off frequency (fT) of 144 GHz, an extrinsic transconductance of 480 mS/mm and a maximum current density of 1.84 A/mm. Silicon offers a cheaper, but inferior foundation that leads to a fT of 113 GHz.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
Live Event