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Technical Insights


Thursday 9th June 2005
The sheer hardness of silicon carbide means that dicing wafers that are based on the material gives device manufacturers a big headache. Now, a novel laser technique - that uses a water jet to cool the material between pulses of the laser - developed by Swiss company Synova may offer a solution, as Infineon Technologies engineers have discovered.
Tuesday 10th May 2005
Tuesday 10th May 2005
The challenge for today's RFIC makers is to produce front-end modules for cell-phone handsets that can deliver increased talk time in a small footprint. According to Agilent Technologies, this can be achieved by integrating E-PHEMT transistors and sophisticated switching. Richard Stevenson reports.
Tuesday 10th May 2005
Demand for smaller, cheaper and yet more complex RF modules from cell-phone handset manufacturers is driving increased GaAs component integration and the development of disruptive RFIC technologies. Walter Wohlmuth details TriQuint's E-/D-mode PHEMT process, developed in response to that demand.
Tuesday 10th May 2005
Maximizing yield, increasing throughput and reducing scrap is becoming increasingly critical for GaAs device manufacturers as customers demand cheaper products. David Lishan from Unaxis, Mike Fresina of RF Micro Devices and their colleagues describe how a large PECVD module has more than proved its worth in a high-volume production environment.
Tuesday 10th May 2005
The overall level of funding that DARPA is putting into GaN microelectronics under its wide-bandgap semiconductors program may have disappointed some, but the agency is certainly fast-tracking the technology. Michael Hatcher takes a look at the three teams on the wide-bandgap roster.
Tuesday 10th May 2005
Demand for InP-based devices may just be crawling out of an extended slump, but its main raw material, indium, is highly sought after - it is currently trading at its highest price for the last 60 years. Thomas Jansseune looks at the market forces that could be problematic for InP manufacturers.
Tuesday 5th April 2005
Challenging the view that electrochemical measurements are awkward to perform and are imprecise is a new profiler that delivers a five-fold improvement in precision. Gyles Webster details progress in electrochemical capacitance-voltage profiling.
Tuesday 5th April 2005
Optical surface analyzers offer a fast method of examining transparent substrate surfaces and classifying defect types. Laurie Bechtler describes the technique and the insights it has provided to researchers making GaN HEMTs at Hitachi Cable.
Tuesday 5th April 2005
Reduced screw dislocation density and faster deposition than conventional MOCVD are just two of the benefits of so-called migration-enhanced MOCVD. The technique shows impressive results when it comes to AlGaN device fabrication, producing relatively efficient deep-ultraviolet LEDs and improved transistor performance, reports Sensor Electronic Technology's Remis Gaska.
Tuesday 5th April 2005
With no domestic oil supply, the Korean government is very keen on LED technology and is pouring hundreds of millions of dollars into "LED Valley". Richard Stevenson reports.
Tuesday 5th April 2005
Tempting the car-buying public and meeting new regulations will drive an increase in LED implementation in cars, particularly for external use, says Eric Mounier of Yole Développement.
Tuesday 8th March 2005
Complex US military projects, such as the development of unmanned air-combat systems, demand an investment in high-technology equipment and a likely role for a range of III-V devices. Yvonne Carts-Powell describes some recent progress that has been made with GaN transistors.
Tuesday 8th March 2005
The renowned BT Photonics Technology Research Centre in the UK is now occupied by R&D outfit The Centre for Integrated Photonics. Richard Stevenson finds out what the start-up plans to do with its intellectual-property and wafer-processing-equipment inheritance from BT and Corning.
Tuesday 8th March 2005
Peter Wellmann, from the University of Erlangen, Germany, describes a new approach to silicon carbide substrate growth that could improve LED and Schottky-diode performance, as well as pave the way for new devices, such as insulated-gate bipolar transistors for power applications.
Tuesday 8th March 2005
After a legal battle spanning nearly four years, Nichia has finally claimed victory over its former employee Shuji Nakamura. Michael Hatcher looks back at the famous blue-LED case and assesses the reaction of the two protagonists.
Tuesday 8th March 2005
Increasing its market share in power amplifiers and creating opportunities for its daughter company Lumileds are two of the strategies that Agilent's semiconductor product group will use as it looks to increase revenue from consumer electronics applications. Michael Hatcher reports.
Wednesday 9th February 2005
3G cell phones and networks, next-generation DVD, and high-speed InP transistors are just some of the key applications that will shape the compound semiconductor industry in 2005, write Michael Hatcher and Richard Stevenson.
Wednesday 9th February 2005
Suppliers of millimeter-wave MMICs must cut their packaging and assembly costs if the technology is to achieve mass-market success. Susan Curtis reports on the emerging sector.
Wednesday 9th February 2005
Swiss start-up BeamExpress has developed a high-volume manufacturing process for long-wavelength singlemode VCSELs, company founder and chief scientist Eli Kapon outlines the wafer-fusion technique.
Wednesday 9th February 2005
Desirable properties such as low-noise performance at room temperature, radiation hardness and high-temperature operation could persuade manufacturers to invest in silicon carbide-based devices for radiation detectors. Richard Stevenson investigates.
Tuesday 14th December 2004
After a year that began with hope of a recovery, chip manufacturers supplying the fiber-optic telecom industry have seen a slump in share prices to well below those at the start of 2004. But as talk of consolidation returns, carriers are at last announcing some major fiber network build-outs.
Wednesday 1st December 2004
The combination of higher growth rates and a lower defect density gives HVPE an edge over techniques such as MOCVD for the growth of UV LEDs. TDI's Vladimir Dmitriev and Alexander Usikov, and Heikki Helava and Barney O'Meara from the Fox Group outline their progress.
Wednesday 1st December 2004
Improvements in LED efficacy at Cree, Osram and Nichia were all voiced at Intertech LEDs 2004, alongside Evident's progress in the commercialization of nanocrystals for phosphor converters and emitter devices. Tim Whitaker and Richard Stevenson describe the highlights of the conference.

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