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Technical Insights


Tuesday 1st May 2001
Bob Metzger describes a patent for a GaP/GaAs HBT emitter and Si base/collector structure.
Tuesday 1st May 2001
Research in several camps suggests that the integration of front-end and baseband components in silicon technology may not be far off, writes Bob Metzger.
Tuesday 1st May 2001
Taiwan's GaAs foundry companies have ambitious plans to capture large slices of the device wafer market, but most of these will not come to fruition, writes Tim Whitaker.
Tuesday 1st May 2001
Using InGaP emitters in GaAs heterojunction bipolar transistors not only offers advantages in terms of cost and performance it makes for excellent reliability too. Barry Lin and Larry Wang summarize the findings of EiC's latest research studies.
Sunday 1st April 2001
The market for high-brightness LEDs already exceeds $1 billion, and it will continue to grow at an impressive rate as prices fall and performance improves. These were the themes of the recent Strategies In Light conference in San Francisco, writes Tim Whitaker.

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