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Friday 13th January 2012
A new versatile indium gallium arsenide device aims to maximise test time by simplifying measurement in analogue RF links and ultrafast digital communications
Friday 13th January 2012
The good news is that the wireless/WiFi market should recover in 2012 and the gallium arsenide IC market should register an 8% gain
Friday 13th January 2012
The micro lensed tool will be exhibited at SPIE’s BiOS & Photonics West conferences
Friday 13th January 2012
The firm has appointed two industry sales veterans; one will be responsible for coordinating the early adaption of 450mm wafers. The other will take on the role of Country Manager for Japan and Korea
Friday 13th January 2012
The cash will be used to deploy a second CIGS line at the company’s Sunnyvale facility
Friday 13th January 2012
Osram's high-performance indium gallium nitride LED chips are fabricated on wafers with a diameter of 6 inches
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Thursday 12th January 2012
The partnership is aimed at developing and marketing high bandwidth, harsh environment optoelectronic solutions for the military, aerospace, commercial aviation, and oil and gas industries
Thursday 12th January 2012
The Japanese global manufacturer of compound semiconductor devices acquires the germicidal LED technology development company
Thursday 12th January 2012
The advanced silicon carbide based platform doubles lumens-per-dollar to accelerate the adoption of LEDs
Thursday 12th January 2012
The firm's LDs, based on indium gallium nitride technology, are fabricated on nonpolar and semipolar GaN substrates and are being showcased at International CES 2012
Wednesday 11th January 2012
The semiconductor equipment manufacturer says the preparation for the judging process uncovered unexpected benefits by identifying the positive points as well as areas for improvement
Wednesday 11th January 2012
The firm says it has made R & D breakthroughs in gallium nitride devices used for highly advanced, mixed-signal digital / RF circuits
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Wednesday 11th January 2012
At International CES, the company is exhibiting a full spectrum of projector products integrating its LED technology, ranging from a 50 lm pico projector to a 4000 lm hybrid projector
Wednesday 11th January 2012
Pierre Yves Lesaicherre succeeds Michael C. Holt and will report directly to Philips Lighting’s acting Chief Executive Officer Frans van Houten
Wednesday 11th January 2012
The new silicon germanium platform supports 4G product developments
Wednesday 11th January 2012
The firm strengthens its Merchant Banking business by appointing Matthias Altieri as Managing Director, head of Solar Energy
Wednesday 11th January 2012
Individual gallium nitride nanowires as small as 60 nanometres show piezoelectric behaviour in 3D up to six times of that exhibited by bulk GaN
Wednesday 11th January 2012
Removing gallium from III-V type-II superlattice materials delivers a massive hike in minority carrier lifetime. Thanks to this, these superlattice detectors have the potential to start challenging expensive state-of-the-art HgCdTe infrared imagers
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Tuesday 10th January 2012
Suzanne B. Rudy has unanimously been voted onto the company’s board
Tuesday 10th January 2012
IMRE researchers reveal a novel technique for fabricating gallium nitride based nanobelts with enhanced functions and applications
Tuesday 10th January 2012
The provider of gallium arsenide, indium phosphide and germanium substrates will give a forecast of the coming year in New York on 11th January 2012
Tuesday 10th January 2012
The AATI shares were bought for $5.80 per share, paid to the seller in cash, without interest and subject to any required withholdings of taxes
Tuesday 10th January 2012
The RFFM6201 FEM is specifically optimised for Smart Energy applications and HAN devices. The module is also suitable for industrial, wireless sensing, and control applications requiring low power, high performance and assured reliability
Tuesday 10th January 2012
Eulitha's ultraviolet photolithography technology and EVG's automated mask aligner product platform should together provide a cheaper nanopatterning solution to manufacture HB-LEDs

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