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Lab & Fab


Thursday 18th October 2018
Chinese team report GaN-on-GaN power rectifier that outperforms lateral GaN-on-Si devices
Monday 15th October 2018
Efficient method for making single-atom-thick, wafer-scale materials opens up opportunities in flexible electronics
Thursday 11th October 2018
Fundamental research could lead to novel applications in electronic and optoelectronic devices
Thursday 11th October 2018
Korean team develops solution process approach to controlling light emitting spectrum
Wednesday 10th October 2018
Innovation allows a 'two-for-the-price-of-one' benefit
Wednesday 10th October 2018
Models of layered hybrid perovskites open new material design space for light-based applications
Wednesday 10th October 2018
Painting solar cells provides new path to market
Wednesday 10th October 2018
MIT engineers use 'remote epitaxy' to make 2D films of GaAs, GaN, and lithium fluoride
Thursday 4th October 2018
Supersized Carbon Perovskite Solar Cell (C-PSC) is made of printable layers
Tuesday 2nd October 2018
German team documents temperature and proton dosages for optical properties
Friday 28th September 2018
Device integrating III-V tandem solar cell and battery could store electricity outside the grid
Wednesday 26th September 2018
Oxford PV and the University of Oxford awarded UK Government funding for five year research project
Wednesday 26th September 2018
Annealing under oxygen flow suppresses the undesirable N-polarity in mixed-polar nanowires and thin films
Monday 24th September 2018
Paves the way for flexible solar cells and high-efficiency building-integrated PV
Thursday 20th September 2018
Osaka team shows solution-processable bismuth-based semiconductors could be alternatives to commercially available inorganic solar cells
Friday 31st August 2018
UCLA team's tandem solar cell converts 22.4 percent of the incoming energy from the sun
Friday 31st August 2018
French team uses a BN separation layer to grow InGaN solar cells and transfer them to glass substrates
Thursday 30th August 2018
Osaka researchers create nanoparticle from ternary non-toxic semiconductors to help create displays and LED lighting with better colours
Thursday 30th August 2018
Atomically thin crystals will play an ever greater role in future - now a new study shows how the crystallisation process can be controlled
Tuesday 28th August 2018
Results of new study pave the way towards an unexplored field in this new class of materials
Tuesday 28th August 2018
Research institutes from Berlin and Jena are developing the world's first pulsed Joule-class laser light source for the mid-infrared spectral range
Tuesday 21st August 2018
First demonstration showing the use of few-layer graphene and MoS2 to successfully fabricate an artificial retina
Wednesday 15th August 2018
Graphene Flagship Partners at the University of Strasbourg and CNRS (France) with associated members at the University of Mons and collaborators at Humboldt University of Berlin and the University of Trento, combined photoswitchable molecular lattices with 2D materials to create new devices that show macroscopic responses to light
Wednesday 15th August 2018
Valentin Brudnyi is using semiconductor nitrides for the production of HEMT transistors and, in particular InAlN/GaN heterostructures, to increase power, thermal stability, and resistance to external high-energy impacts
Monday 13th August 2018
Glasgow group develops new form of electronics manufacturing which embeds semiconductor nanowires into flexible surfaces
Friday 10th August 2018
Scientists at the University of Washington show that two stacked monolayers of WTe2 produce spontaneous electrical polarisation
Wednesday 8th August 2018
NASA teams investigate the potential for GaN to map the earths's magnetosphere and to make a solid-state neutron detector
Tuesday 7th August 2018
Finnish optoelectronics professor to review the latest advances in developing light sources for heterogenous integration with silicon
Tuesday 31st July 2018
Physicists have succeeded in experimentally demonstrating Wannier-Stark localisation for the first time in GaAs
Thursday 26th July 2018
2D semiconductor device sets the stage for new generation of optoelectronic devices that consume less energy and are smaller and faster than current devices

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