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Lab & Fab

News

Wednesday 19th February 2025

Korean team develops method to evaluate SiC chips for space

News

Monday 17th February 2025

Realising red LEDs on ScAlMgO₄ substrates

News

Thursday 13th February 2025

A new way to find better semiconductors?

News

Monday 10th February 2025

A debut for the native AlN transistor

News

Thursday 6th February 2025

CEA-Leti reports latest integration advances

News

Thursday 6th February 2025

KRISS develops new materials for SWIR sensors

News

Wednesday 5th February 2025

What goes on inside perovskite cells?

News

Wednesday 5th February 2025

Realising tuneable InGaN laser diodes

News

Tuesday 4th February 2025

Double heterostructure HEMTs for handsets

News

Monday 3rd February 2025

SiC MOSFETs: Understanding the benefits of plasma nitridation

News

Thursday 30th January 2025

UK team leads diamond-FET breakthrough

News

Monday 27th January 2025

Mesa sidewall design improves HV DUV LEDs

News

Wednesday 22nd January 2025

Transforming the current density of AlN Schottky barrier diodes

News

Wednesday 22nd January 2025

Turbocharging the GaN MOSFET with a HfO₂ gate

News

Monday 20th January 2025

Advancing tuneable InP lasers on a heterogeneous platform

News

Monday 20th January 2025

P-GaN gate HEMTs have record threshold voltage

News

Monday 20th January 2025

Narrow-linewidth DFB lasers now at 405 and 488nm

News

Wednesday 15th January 2025

Boosting AlN-on-AlN Schottky barrier diode performance

News

Monday 13th January 2025

Improving annealing conditions for GaN MOSFETs

News

Monday 13th January 2025

Printing high-speed modulators on SOI

News

Wednesday 8th January 2025

Na‑flux method improves GaN device performance

News

Tuesday 7th January 2025

Penn State makes breakthrough in photonic switching

News

Thursday 2nd January 2025

Precursor modulation enhances DUV LED efficiency

News

Tuesday 31st December 2024

HKUST team develops DUV microLED chips for lithography