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Lab & Fab

Friday 15th June 2012
The internal stresses generated when the gallium nitride crystals originally formed on the silicon substrate are reduced when the epilayers are transferred to a copper substrate
Friday 15th June 2012
Exposing plasma-damaged GaN to high doses of H radicals, restores the photoluminescence to almost the level of unetched GaN
Tuesday 12th June 2012
A new material should enable even higher resolutions, lower power consumption, and higher performance touch screens, as well as narrower bezel widths for LCD display panels used in mobile devices such as smartphones
Friday 8th June 2012
Gallium indium phosphide cells have high quantum efficiency in wavelengths between 400 and 700 nm and an intrinsically low dark current. They provide high efficiency in lowlight conditions, such as underwater
Monday 4th June 2012
New silicon carbide technology should enable more accurate monitoring and safer control in high-temperature operations
Friday 18th May 2012
The lasers are nanometre-sized semiconductor particles called colloidal quantum dots (CQDs) with an inner core of cadmium and selenium alloy and a coating of zinc, cadmium, and sulphur alloy. Adjusting the size of the pyramid-shaped QDs changes the laser light colour
Monday 23rd April 2012
Using a modulation-doping strategy in 3D bulk silicon germanium thermoelectric materials enhances their carrier mobility and hence electrical conductivity by over 50%
Monday 16th April 2012
UCSB theorists have revealed that magnesium in GaN is not a typical shallow acceptor
Friday 6th April 2012
The novel laser traps a million rubidium atoms in a space of about 2 centimetres between two mirrors. The atoms synchronise their internal oscillations to emit laser light
Thursday 5th April 2012
Optimising high frequency and power performance, the 3" wafer-level process enables lithographic access to both the front- and backside of an Indium phosphide HBT. The vital step in gaining access to both sides is to completely remove the supporting substrate
Tuesday 3rd April 2012
Researchers have used a simulation of indium arsenide quantum dots, comprised an indium-rich central core surrounded by an indium-poor region. This model enables accurate reproduction of experimentally measured optical spectra
Tuesday 27th March 2012
Scientists have developed Hall effect gallium nitride based magnetic field sensors which can be used in space crafts and nuclear power stations
Monday 26th March 2012
Decimation of optical quality associated with point defects has been identified as in-grown gallium vacancies rather than isolated gallium vacancies typically introduced by high electron energy irradiation
Wednesday 21st March 2012
Combining two common topological insulators together reduces the number of defects to produce true insulating topological insulator behaviour
Thursday 1st March 2012
Visible red light can be produced when applying a voltage across gallium arsenide crystals whilst simultaneously illuminating the material with an invisible infrared laser pulse
Tuesday 28th February 2012
The material properties, which arise from holes in an impurity band, created by manganese doping, depletes the valence band and shifts the Fermi level . This should enable a boost in the materials' spintronics performance
Monday 27th February 2012
Scientists have found a way to detect chemicals over long distances, even when they are enclosed in containers
Friday 24th February 2012
MIT researchers say they can control the composition and structure of tiny indium nitride and indium gallium nitride wires as they grow
Monday 20th February 2012
Results indicate that manganese doped zinc sulphide is paramagnetic, meaning it is only attracted when in the presence of an externally applied magnetic field
Thursday 9th February 2012
A new technique using cadmium selenide quantum dots holds promise for better understanding of brain disorders
Tuesday 31st January 2012
Rice University researchers first to see superfluorescence from solid-state material, incorporating indium, gallium and arsenide quantum wells separated by gallium arsenide barriers
Tuesday 31st January 2012
When six month old CdSe/CdS nanocrystals in solution were subjected to ultraviolet light, luminescence increased by seven times
Wednesday 25th January 2012
A new procedure to measure SEM samples greatly improves its ability to measure the crystal structure of nanoparticles and extremely thin films including indium gallium nitride
Monday 23rd January 2012
Promise seen for applications in life sciences, precise measurements for industry and ultra-compact projectors