Thursday 13th October 2011
Compared to their previous work which demonstrated pulsed laser operation, the French IES group have incorporated in the laser a layer which has a dual function as an etch-stop and an ohmic contact layer.
Wednesday 28th September 2011
The lead selenide quantum dots are so close together that every single light particle that is absorbed by the solar cell actually causes electrons to move
Tuesday 27th September 2011
New developments make it possible to construct hybrid electronic components that combine the computational power of the CMOS chip and the power handling capability of gallium nitride transistors.
Monday 26th September 2011
Uncontrolled evaporation of silicon can produce poor quality material useless to designers of electronic devices grown on silicon carbide.
Friday 23rd September 2011
Scientists have shown an amazing degree of control over a fundamental aspect of an electronic circuit by showing how electrons move from one place to another.
Thursday 22nd September 2011
NASA funding will help researchers to fabricate and test compound semiconductor photovoltaic devices that are capable of possessing a solar energy conversion efficiency of over 40 percent.
Wednesday 21st September 2011
Quantum dots can be tightly packed and more efficient according to recent findings on PbS solar cells.
Monday 19th September 2011
Researchers and manufacturers can now incorporate tetrapod cadmium selenide quantum dots into new state-of-the-art electronics products that require industrial scale amounts of material.
Tuesday 23rd August 2011
The simplified techniques require fewer expensive and complex processing operations of silicon germanium via filling and offer IC manufacturers potential cost and cycle time improvements.
Monday 22nd August 2011
To bypass the problem of unruly nanowires, scientists deliberately cut sapphire along different crystal planes on which they grew gallium nitride nanowires. This resulted in various surface patterns including “steps” of nanometre dimensions between the different planes, as well as accordion-like, V-shaped grooves.
Tuesday 9th August 2011
The indium aluminium gallium arsenide / indium phosphide microlasers have achieved continuous-wave (CW) electrically injecting single-mode-operation at room temperature.
Monday 8th August 2011
Scientists say they have shown that neither direct nor indirect Auger recombination are the primary cause of droop in indium gallium nitride quantum wells.
Friday 5th August 2011
Flexible, transparent electronics are closer to reality with the creation of graphene-based electrodes at Rice University.
Monday 1st August 2011
Using temperatures close to absolute zero and a magnetic field, researchers have captured electrons in ultrapure gallium arsenide microscopic wells and forced them to interact only with each other.
Wednesday 20th July 2011
NIST researchers have found that dense arrays of extra-long carbon nanotubes absorb nearly all light of long wavelengths, and are promising coatings for prototype detectors intended to measure terahertz laser power.
Friday 15th July 2011
With the Advanced Light Source (ALS), Berkeley Lab scientists have explored the electronic structure of graphene grown on a silicon carbide substrate, in regions never before tested by experiment.
Wednesday 13th July 2011
A novel technique known as LED-FM can diagnose tuberculosis more quickly and efficiently than current methods.
Tuesday 12th July 2011
RSL hopes to commercialise its indium gallium nitride-on-silicon technology in the next 2-3 years and then develop it further for growth on 200mm silicon substrates.
Monday 11th July 2011
The European Space Agency (ESA) camera to be used for the mission to map one thousand million stars, uses high temperature resistant silicon carbide as the CCD support structure.
Friday 8th July 2011
InAsP segments embedded in indium phosphide nanowires emit light, whose direction can be altered by adjusting the position of the InAsP active region.
Thursday 7th July 2011
Scientists are claiming that zinc oxide nanowire waveguide lasers can offer smaller sizes, lower costs, higher powers and shorter wavelengths than conventional gallium nitride UV lasers.
Thursday 7th July 2011
A Polish team’s violet indium gallium nitride laser is a good candidate for ultra-high optical power systems like laser projectors, thanks to its combination of high-power operation, good spectral characteristics and differential efficiency.
Tuesday 5th July 2011
Changing the size of indium phosphide quantum dots alters the colour of light they absorb or give out and so can be customised to match required parts of the solar spectrum.
Wednesday 29th June 2011
The low-cost technology of inkjet printing, which in recent decades has revolutionised home and small office printing, may soon offer similar benefits for the future of solar energy.