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Lab & Fab


Tuesday 28th February 2012
The material properties, which arise from holes in an impurity band, created by manganese doping, depletes the valence band and shifts the Fermi level . This should enable a boost in the materials' spintronics performance
Monday 27th February 2012
Scientists have found a way to detect chemicals over long distances, even when they are enclosed in containers
Friday 24th February 2012
MIT researchers say they can control the composition and structure of tiny indium nitride and indium gallium nitride wires as they grow
Monday 20th February 2012
Results indicate that manganese doped zinc sulphide is paramagnetic, meaning it is only attracted when in the presence of an externally applied magnetic field
Thursday 9th February 2012
A new technique using cadmium selenide quantum dots holds promise for better understanding of brain disorders
Tuesday 31st January 2012
Rice University researchers first to see superfluorescence from solid-state material, incorporating indium, gallium and arsenide quantum wells separated by gallium arsenide barriers
Tuesday 31st January 2012
When six month old CdSe/CdS nanocrystals in solution were subjected to ultraviolet light, luminescence increased by seven times
Wednesday 25th January 2012
A new procedure to measure SEM samples greatly improves its ability to measure the crystal structure of nanoparticles and extremely thin films including indium gallium nitride
Monday 23rd January 2012
Promise seen for applications in life sciences, precise measurements for industry and ultra-compact projectors
Monday 23rd January 2012
When laser light impacts a gallium arsenide nanomembrane, some of the light is reflected and the light is reflected back again via a mirror. The light flies back and forth in this space and forms an optical resonator.
Tuesday 17th January 2012
Gallium oxide transistors could rival silicon carbide and gallium nitride in power device applications ; they could be cheaper and save more energy when produced on mass
Wednesday 11th January 2012
Individual gallium nitride nanowires as small as 60 nanometres show piezoelectric behaviour in 3D up to six times of that exhibited by bulk GaN
Wednesday 11th January 2012
Removing gallium from III-V type-II superlattice materials delivers a massive hike in minority carrier lifetime. Thanks to this, these superlattice detectors have the potential to start challenging expensive state-of-the-art HgCdTe infrared imagers
Tuesday 10th January 2012
IMRE researchers reveal a novel technique for fabricating gallium nitride based nanobelts with enhanced functions and applications
Tuesday 3rd January 2012
The mixer provides new opportunities as it enables compact circuit technology, potential to reach high frequencies and integration with silicon technology
Wednesday 28th December 2011
Using a sandwiched sub-nano separator growth technique, indium arsenide / indium gallium arsenide quantum dots have been used to create a broad new band the 1.31-μm region
Friday 23rd December 2011
Scientists say they have developed a solar paint which can be made cheaply and in large quantities. If the efficiency can be improved, they may be able to make a real difference in meeting energy needs in the future
Friday 23rd December 2011
The "MacEtch" wet etch solution ensures that only the areas touching metal are etched away, and high-aspect-ratio structures are formed as the metal sinks into the wafer. After etching , the metal can be cleaned from the surface without damaging it
Thursday 22nd December 2011
These findings may lead to the development of ultra-high-speed transistors and high-efficiency photovoltaic cells using gallium arsenide
Tuesday 20th December 2011
Studies on electric friction in gallium arsenide could be useful in the future for designing more efficient and faster electronics and finding new tricks to reduce electrical resistance
Friday 16th December 2011
Researchers from NREL have developed a solar cell using PbSe quantum dots which exhibits multiple exciton generation
Wednesday 30th November 2011
Gallium nitride nanowires grown by PML scientists may only be a few tenths of a micron in diameter, but they promise a very wide range of applications, from new LEDs and diode lasers to ultra-small resonators, chemical sensors, and highly sensitive atomic probe tips.
Monday 28th November 2011
Researchers at the University of Delaware have explored novel methods for assembling indium arsenide quantum dots for use in next generation computing devices and solar energy capture.
Tuesday 15th November 2011
The nanoscale devices which incorporate small islands of indium arsenide, are claimed to be ultrafast and a thousand times more energy efficient than laser-based devices.