Info
Info
search:

< Page of 13987 >

Lab & Fab


Wednesday 22nd June 2011
A gas sensor incorporating a single gallium nitride nanowire offers advantages over today’s commercial gas sensors, including low-power room-temperature operation.
Wednesday 15th June 2011
Researchers have produced the first well-defined two-dimensional oxide layers on III-Vs by oxidising InGaAs, InAs, and InSb substrate surfaces.
Friday 10th June 2011
Scientists have found that employing different growth conditions can improve the properties of gallium arsenide nanowires grown on silicon (111) substrates.
Tuesday 24th May 2011
New developments have shown that the thickness of graphene on SiC can be measured using Electrostatic Force Microscopy in ambient conditions.
Tuesday 17th May 2011
The GaAs/InAs laser is suited to optical communication systems and could herald a new era in low-energy data interconnects that communicate with light as well as electrons.
Friday 13th May 2011
The multi-junction tandem solar cell initially developed at NREL has proved to be an important strategy to understand how to boost the efficiency of corn, grasses, algae, and other plants that use photosynthesis to produce stored solar energy.
Friday 13th May 2011
The multi-junction tandem solar cell initially developed at NREL has proved to be an important strategy to understand how to boost the efficiency of corn, grasses, algae, and other plants that use photosynthesis to produce stored solar energy in plants.
Thursday 5th May 2011
The GaAs based VCSEL operating at a wavelength of 894 nm operates at only 2 mW, and consumes over a thousand times less power than the conventional light source used in atomic clocks, a rubidium-based atomic vapour lamp.
Wednesday 4th May 2011
The structure consists of n-type zinc oxide nanocones surrounded by a p-type polycrystalline CdTe semiconductor. The n-type nanoncones serve as the junction framework and the electron conductor while the p-type matrix is the primary photon absorber medium and hole conductor.
Tuesday 26th April 2011
Researchers have discovered a new method for boosting the light output of Green LEDs. This could be a critical step towards the development of LED televisions and displays.
Wednesday 20th April 2011
UCSB scientists have used quantum-mechanical calculations and are backing up experimentalists by saying that LED droop can be attributed to Auger recombination and indirect Auger effects.
Friday 15th April 2011
Empa researchers used an electron microscope to stabilise the polarisation of light emitted by a vertical cavity surface emitting laser (VCSEL) thereby improving its operation.
Thursday 14th April 2011
Ohio scientists say that expertise and equipment for compound semiconductor device fabrication is already in place and must be capitalised on. With organic and inorganic materials working together, computer chip technology can move forward straight away.
Friday 8th April 2011
UK researchers have found a novel method of producing AlxGa1-xN bulk crystals of designed composition for use in UV LED device manufacturing.
Wednesday 6th April 2011
“Nanocrystal doping” developed by Hebrew University researchers results in semiconductor nanocrystals with enhanced electrical function.
Wednesday 30th March 2011
Japanese researchers have designed an optoelectronic integrated circuit for use in one-bit digital counters.
Monday 28th March 2011
Dramatically reducing power losses, the device increases break-down voltage and eliminates current collapse.
Friday 25th March 2011
The time needed for self-healing was a function of the crack size. The discovery holds implications for increased reliability and extended lifetime of nanowire-based semiconductor devices.
Thursday 24th March 2011
Epitaxial graphene may be the basis for a new generation of high-performance devices that will take advantage of the material's unique properties in applications where higher costs can be justified.
Thursday 24th March 2011
Determining the dislocation densities in 4H-SiC by etch pit density measurements must account for the type of doping and its level.
Friday 18th March 2011
Scanning Tunnelling Microscopy (STM) can be used to position charged vacancies and adatoms on the surface of a semiconductor, suggesting a new and direct method for quantifying the charge of defects and adsorbates at surfacs.
Monday 14th March 2011
The possibility of tuning the electronic and optoelectronic properties of nanowires becomes possible via strain engineering.
Tuesday 8th March 2011
Researchers hope their development will see the power consumption of a complete optical link, between circuits in a computer (including drive electronics and receiver) will be no more than 100 fJ/bit.
Friday 4th March 2011
Penn State University has developed, what it claims, is the first new type of optical fibre that contains, at its core, a high-purity crystalline compound of zinc selenide (ZnSe).