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Lab & Fab

Tuesday 2nd October 2012
For the first time, researchers have watched and controlled 3D gallium arsenide etching in real time
Monday 1st October 2012
Using indium arsenide and indium gallium arsenide materials, scientists have recently observed how electrons in individual quantum dots absorb energy and emit it again as light
Monday 24th September 2012
The laser-guided device allows measurements to be taken from the roadside at night
Friday 21st September 2012
Gallium nitride transistors with good structural and electrical characteristics have been produced by ammonia MBE on a 100 mm silicon substrate
Tuesday 18th September 2012
The concentration of gallium in the confining layers immediately above the indium phosphide self assembled quantum dots strongly influences their properties
Tuesday 11th September 2012
A new laser-based solar simulator produces a spectral distribution almost identical to sunlight at wavelengths from 450 to 1750 nm. It can be used to characterise solar cells including III-V multi-junction based modules
Monday 10th September 2012
A novel flexible structure composed of gallium arsenide nanowires on graphene could revolutionise the entire semiconductor industry
Monday 10th September 2012
Researchers have demonstrated a noise-free wavelength conversion using silicon nitride waveguides fabricated on a silicon substrate
Monday 3rd September 2012
Using a new technique known as void-assisted separation, Hitachi Cable has developed gallium nitride power devices with low dislocation densities and a very high breakdown voltage
Tuesday 28th August 2012
A tool created by scientists at the University of Sheffield has enabled researchers to analyse nanometre-sized devices without destroying them for the first time. The tool could be used in harvesting solar energy, computing and communication
Monday 27th August 2012
Researchers have developed indium phosphide based long-wavelength VCSELs which have a bandwidth of 100nm
Friday 24th August 2012
The firm's latest solar cell contains abundantly available materials and goes beyond 11 percent efficiency. IBM says CZTS could compete with CIGS and CdTe in the future as the latter two compounds contain rare and expensive elements
Friday 24th August 2012
According to new research, a novel technique of fabricating zinc selenide / cadmium sulphide photovoltaic films could produce a more stable solar panel than organic versions and reach commercialisation
Thursday 23rd August 2012
A novel technique combines electronic excitation and optical detection, to explore the inside of a photonic crystal and study the confinement of light in a silicon nitride membrane Mainbody:
Wednesday 22nd August 2012
A new type of material based on manganese doped Bi2Te3−ySey opens the door to electronics based on topologically non-trivial materials
Tuesday 21st August 2012
A new process developed at MIT could enable better LED displays, solar cells and biosensors - and foster basic physics research with the use of cadmium based compounds
Tuesday 21st August 2012
A prototype colloidal QD solar cell comprising lead sulphide has achieved 7 percent efficiency
Monday 13th August 2012
Using gallium arsenide / aluminium gallium arsenide based quantum well structures, scientists have demonstrated new possibilities of increasing energy efficiency in electronics
Thursday 9th August 2012
Growing infrared detectors on large area substrates would enhance capabilities in astronomy, remote detection and medical diagnosis
Monday 23rd July 2012
Boron-doped cubic silicon carbide holds great potential as a base material in highly efficient solar cells. Researchers at Linköping University have pioneered a growth process that could propel the potential into reality
Friday 29th June 2012
Illuminating a sample of gallium arsenide with a pattern of light aligns the spins of all the electrons simultaneously, creating a spintronic circuit
Thursday 21st June 2012
By using a {20-21} semi-polar gallium nitride substrate, adjusting crystal growth, wafer processing, and laser production processes, a joint venture has developed a true green laser diode
Wednesday 20th June 2012
The 10 GHz gallium nitride device reduces chip footprint by over 90%, enabling more compact radars and wireless communications equipment
Tuesday 19th June 2012
Sandia's latest development shows that indium gallium nitride may increase the conversion percentage of the sun’s frequencies and permits flexible energy absorption