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Lab & Fab


Tuesday 27th August 2013
Lead selenide could revolutionise solar cells
Tuesday 20th August 2013
Researchers question claims of a definitive proof for Auger recombination as the cause of LED droop.
Friday 16th August 2013
TriQuint builds a ring oscillator with more than a thousand transistors.
Wednesday 14th August 2013
Doping cadmium telluride with copper increases solar cell efficiency from 8 to 11.5 percent
Monday 12th August 2013
A new sensor incorporating GaN (gallium nitride) could provide an artificial sense of touch and be used in biological imaging and MEMS systems
Monday 12th August 2013
LEDs grown on the (2021) plane produce tiny shifts in emission wavelength with increasing drive current, thanks to reduced polarization effects.
Thursday 1st August 2013
By accurately probing 2D indium arsenide (InAs), researchers have discovered the magnitude of step-wise absorptance is independent of membrane thickness and electron band structure
Thursday 1st August 2013
Will a new buffer material for GaN tempt LED manufacturers away from sapphire and onto silicon?
Thursday 1st August 2013
None - it's an LED bulb
Tuesday 30th July 2013
Using picosecond laser pulses diminishes thermal degradation to get a more accurate measurement of a material’s optical gain; this is vital for laser development
Monday 29th July 2013
By varying the compositional ratio of indium to gallium in InGaN, the band gap of the material can be tuned, allowing for device optimisation in the study of biological interactions
Thursday 25th July 2013
A new process enables the relatively inexpensive growth of III-Vs. The VLS process is claimed to enable similar optoelectronic properties to those obtained by III-Vs grown using MOCVD
Tuesday 9th July 2013
Passing light through platelets of a special material incorporating cadmium telluride and silicon nitride and applying a magnetic field can rotate the polarisation direction of light
Thursday 4th July 2013
Unlike CIGS, CZTS and CZTSe do not suffer from abundancy issues. Under certain conditions, the CZTS and CZTSe bandgaps make a combined material system that are ideal for a multi-junction, thin-film solar cell that rivals the efficiency of CIGS cells
Thursday 4th July 2013
The combination of using a continuous flow reactor, which is much faster than batch mode synthesis, commonly used for CIGS, and the use of cheap environmentally friendly materials promises to cut costs
Thursday 27th June 2013
Researchers have found that in-situ monitoring can provide vital information on the evolution of indium phosphide nanowire lengths and diameters during growth
Friday 21st June 2013
The room temperature tunnelling behaviour of boron nitride (BN) nanotubes has been demonstrated with the aid of gold quantum dots
Thursday 13th June 2013
A fast, versatile, and high-resolution technique potentially allows surface and subsurface viewing of features 10 nm in size
Tuesday 11th June 2013
Researchers in the US have advanced molybdenum disulphide (MoS2) technology. This semiconductor could be joined with graphene and hexagonal boron nitride to form FETs, integrated logic circuits, photodetectors and flexible optoelectronics
Monday 10th June 2013
Scientists have demonstrated what they claim is the first monolithic integration of an LED and High-Electron-Mobility Transistor (HEMT) on a single gallium nitride chip
Friday 7th June 2013
To bind gallium nitride with manganese, scientists have used the nitrogen polarity of GaN and heated the sample
Thursday 6th June 2013
Plasma-assisted MBE growth of InGaN directly on to silicon helps the development of tandem solar cells and optoelectronic devices operating at telecom wavelengths
Wednesday 5th June 2013
Substrate thinning, device encapsulation and the introduction of gold interconnects takes single-chip ultraviolet LED performance to a new level
Wednesday 5th June 2013
Researchers have inexpensively and precisely applied cadmium selenide quantum dots onto OLEDs using inkjet printing to produce QD-LEDs