Mircea Guina to present on GaAs and GaSb integration
Mircea Guina of Tampere University of Technology, Finland, will be presenting on advances in GaAs and GaSb optoelectronics for heterogeneous integration with silicon-photonics at the Photonic Integration Conference 2018, which will take place on October 2 2018, at High Tech Campus Eindhoven, The Netherlands.
Guina, who leads the Tampere University Optoelectronics Research Centre. conducts scientific work related to molecular beam epitaxy and novel optoelectronic devices for applications in sensing, automotive, photovoltaics, medicine, and quantum technology. Focus areas are epitaxy highly mismatched III-V semiconductor alloys, such as GaInNAsSb and GaAsBi, site-controlled epitaxy of quantum dots and nanowires, high efficiency multi-junction solar cells, high power disk lasers and edge-emitting lasers, and active chips for photonic integrated circuits.
The combined expertise in epitaxy and processing of optoelectronics devices has enabled Guina's team to achieve important milestones in the development of optoelectronic devices covering a spectral range from 630 nm to 2.5 µm.
With this perspective, Guina will review the latest advances in developing GaAs- and GaSb-based light sources for heterogenous integration with silicon. In terms of integration platform, he will address hybrid and novel monolithic approaches. Specific applications discussed include un-cooled operation of transceivers at 1.2 -1.3 µm window and integrated programmable light sources for sensing at 2-3 µm window.
Guina has published more than 180 journal papers, several book chapters, and holds four international patents.
