X-FAB launches next-generation SiC platform
X-FAB Silicon Foundries has launched XSICM03, its next-generation XbloX platform, advancing SiC process technology for power MOSFETs, delivering significantly reduced cell pitch, enabling increased die per wafer and improved on-state resistance without compromising reliability.
XbloX is X-FAB’s business process and technology platform for accelerating the development of advanced SiC MOSFET technology. It integrates qualified SiC process development blocks and modules for planar MOSFET production, enabling faster prototyping, easier design evaluation, and shorter time to market.
This approach allows designers to create a diverse product portfolio while achieving production timelines up to nine months faster than traditional development methods, according to the company.
This next generation platform provides active area design cell size reduction while maintaining robust process controls, as well as leakage and breakdown device performance. The XSICM03 platform with robust design rules allows customers to create SiC planar MOSFETs with a cell pitch that is over 25 percent smaller than the previous generation. This improvement allows for up to a 30 percent increase in die per wafer compared to the previous generation.
Rico Tillner, CEO, X-FAB Texas explains: "With its streamlined approach, our next-generation process platform addresses the increasing demand for high-performance SiC devices in automotive, industrial, and energy applications. We enable existing and new customers in creating application-optimised product portfolios through accelerated prototyping and design evaluation, significantly reducing time to market.”
The next generation platform XSICM03 is now available for early access.
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