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Lab & Fab

Tuesday 26th April 2011
Researchers have discovered a new method for boosting the light output of Green LEDs. This could be a critical step towards the development of LED televisions and displays.
Wednesday 20th April 2011
UCSB scientists have used quantum-mechanical calculations and are backing up experimentalists by saying that LED droop can be attributed to Auger recombination and indirect Auger effects.
Friday 15th April 2011
Empa researchers used an electron microscope to stabilise the polarisation of light emitted by a vertical cavity surface emitting laser (VCSEL) thereby improving its operation.
Thursday 14th April 2011
Ohio scientists say that expertise and equipment for compound semiconductor device fabrication is already in place and must be capitalised on. With organic and inorganic materials working together, computer chip technology can move forward straight away.
Friday 8th April 2011
UK researchers have found a novel method of producing AlxGa1-xN bulk crystals of designed composition for use in UV LED device manufacturing.
Wednesday 6th April 2011
“Nanocrystal doping” developed by Hebrew University researchers results in semiconductor nanocrystals with enhanced electrical function.
Wednesday 30th March 2011
Japanese researchers have designed an optoelectronic integrated circuit for use in one-bit digital counters.
Monday 28th March 2011
Dramatically reducing power losses, the device increases break-down voltage and eliminates current collapse.
Friday 25th March 2011
The time needed for self-healing was a function of the crack size. The discovery holds implications for increased reliability and extended lifetime of nanowire-based semiconductor devices.
Thursday 24th March 2011
Epitaxial graphene may be the basis for a new generation of high-performance devices that will take advantage of the material's unique properties in applications where higher costs can be justified.
Thursday 24th March 2011
Determining the dislocation densities in 4H-SiC by etch pit density measurements must account for the type of doping and its level.
Friday 18th March 2011
Scanning Tunnelling Microscopy (STM) can be used to position charged vacancies and adatoms on the surface of a semiconductor, suggesting a new and direct method for quantifying the charge of defects and adsorbates at surfacs.
Monday 14th March 2011
The possibility of tuning the electronic and optoelectronic properties of nanowires becomes possible via strain engineering.
Tuesday 8th March 2011
Researchers hope their development will see the power consumption of a complete optical link, between circuits in a computer (including drive electronics and receiver) will be no more than 100 fJ/bit.
Friday 4th March 2011
Penn State University has developed, what it claims, is the first new type of optical fibre that contains, at its core, a high-purity crystalline compound of zinc selenide (ZnSe).
Thursday 3rd March 2011
Growing the active region of the deep UV-LEDs under a liquid phase growth mode produces AlGaN alloys with a strong band structure potential fluctuations and LEDs with high internal quantum efficiency.
Wednesday 2nd March 2011
Infinera's InP monolithic PIC contains more than 150 optical components, which are all integrated onto a single chip smaller than a fingernail.
Wednesday 2nd March 2011
NIST researchers have shown that electron beam lithography and etching can produce quantum dots which can be shaped and positioned more reliably than dots made with conventional crystal growth methods.
Friday 25th February 2011
LG Innotek and the University of Delaware's Institute of Energy Conversion (IEC) will explore the development of a high-voltage CIGS “superstrate” solar cell structure. Unlike most CIGS solar cell modules which require two pieces of glass, the superstrate cell will require only one sheet of glass, on the light-exposed side of the cell solar cell.
Wednesday 23rd February 2011
The highly integrated DOTFIVE chips-set includes all required circuitry and the technology could be a key driver in the THz imaging, security, medical and scientific markets.
Friday 11th February 2011
A team from Chang Gung University says efficiency droop is probably dominated by the injection efficiency of holes rather than electron leakage in wide-well InGaN DH LEDs.
Monday 7th February 2011
This technique may provide a powerful and new avenue for engineering on-chip nanophotonic devices such as lasers, photodetectors, modulators and solar cells.
Friday 4th February 2011
Theorists argue that electron overflow, the primary cause of LED droop, is sensitive to the properties of the electron-blocking layer
Thursday 3rd February 2011
By implanting a buffer made of argon, researchers have created GaN devices that can handle 10 times as much power as those without.