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Lab & Fab

Tuesday 21st August 2012
A new process developed at MIT could enable better LED displays, solar cells and biosensors - and foster basic physics research with the use of cadmium based compounds
Tuesday 21st August 2012
A prototype colloidal QD solar cell comprising lead sulphide has achieved 7 percent efficiency
Monday 13th August 2012
Using gallium arsenide / aluminium gallium arsenide based quantum well structures, scientists have demonstrated new possibilities of increasing energy efficiency in electronics
Thursday 9th August 2012
Growing infrared detectors on large area substrates would enhance capabilities in astronomy, remote detection and medical diagnosis
Monday 23rd July 2012
Boron-doped cubic silicon carbide holds great potential as a base material in highly efficient solar cells. Researchers at Linköping University have pioneered a growth process that could propel the potential into reality
Friday 29th June 2012
Illuminating a sample of gallium arsenide with a pattern of light aligns the spins of all the electrons simultaneously, creating a spintronic circuit
Thursday 21st June 2012
By using a {20-21} semi-polar gallium nitride substrate, adjusting crystal growth, wafer processing, and laser production processes, a joint venture has developed a true green laser diode
Wednesday 20th June 2012
The 10 GHz gallium nitride device reduces chip footprint by over 90%, enabling more compact radars and wireless communications equipment
Tuesday 19th June 2012
Sandia's latest development shows that indium gallium nitride may increase the conversion percentage of the sun’s frequencies and permits flexible energy absorption
Friday 15th June 2012
The internal stresses generated when the gallium nitride crystals originally formed on the silicon substrate are reduced when the epilayers are transferred to a copper substrate
Friday 15th June 2012
Exposing plasma-damaged GaN to high doses of H radicals, restores the photoluminescence to almost the level of unetched GaN
Tuesday 12th June 2012
A new material should enable even higher resolutions, lower power consumption, and higher performance touch screens, as well as narrower bezel widths for LCD display panels used in mobile devices such as smartphones
Friday 8th June 2012
Gallium indium phosphide cells have high quantum efficiency in wavelengths between 400 and 700 nm and an intrinsically low dark current. They provide high efficiency in lowlight conditions, such as underwater
Monday 4th June 2012
New silicon carbide technology should enable more accurate monitoring and safer control in high-temperature operations
Friday 18th May 2012
The lasers are nanometre-sized semiconductor particles called colloidal quantum dots (CQDs) with an inner core of cadmium and selenium alloy and a coating of zinc, cadmium, and sulphur alloy. Adjusting the size of the pyramid-shaped QDs changes the laser light colour
Monday 23rd April 2012
Using a modulation-doping strategy in 3D bulk silicon germanium thermoelectric materials enhances their carrier mobility and hence electrical conductivity by over 50%
Monday 16th April 2012
UCSB theorists have revealed that magnesium in GaN is not a typical shallow acceptor
Friday 6th April 2012
The novel laser traps a million rubidium atoms in a space of about 2 centimetres between two mirrors. The atoms synchronise their internal oscillations to emit laser light
Thursday 5th April 2012
Optimising high frequency and power performance, the 3" wafer-level process enables lithographic access to both the front- and backside of an Indium phosphide HBT. The vital step in gaining access to both sides is to completely remove the supporting substrate
Tuesday 3rd April 2012
Researchers have used a simulation of indium arsenide quantum dots, comprised an indium-rich central core surrounded by an indium-poor region. This model enables accurate reproduction of experimentally measured optical spectra
Tuesday 27th March 2012
Scientists have developed Hall effect gallium nitride based magnetic field sensors which can be used in space crafts and nuclear power stations
Monday 26th March 2012
Decimation of optical quality associated with point defects has been identified as in-grown gallium vacancies rather than isolated gallium vacancies typically introduced by high electron energy irradiation
Wednesday 21st March 2012
Combining two common topological insulators together reduces the number of defects to produce true insulating topological insulator behaviour
Thursday 1st March 2012
Visible red light can be produced when applying a voltage across gallium arsenide crystals whilst simultaneously illuminating the material with an invisible infrared laser pulse