Info
Info
search:

< Page of 13987 >

Lab & Fab


Monday 23rd January 2012
When laser light impacts a gallium arsenide nanomembrane, some of the light is reflected and the light is reflected back again via a mirror. The light flies back and forth in this space and forms an optical resonator.
Tuesday 17th January 2012
Gallium oxide transistors could rival silicon carbide and gallium nitride in power device applications ; they could be cheaper and save more energy when produced on mass
Wednesday 11th January 2012
Individual gallium nitride nanowires as small as 60 nanometres show piezoelectric behaviour in 3D up to six times of that exhibited by bulk GaN
Wednesday 11th January 2012
Removing gallium from III-V type-II superlattice materials delivers a massive hike in minority carrier lifetime. Thanks to this, these superlattice detectors have the potential to start challenging expensive state-of-the-art HgCdTe infrared imagers
Tuesday 10th January 2012
IMRE researchers reveal a novel technique for fabricating gallium nitride based nanobelts with enhanced functions and applications
Tuesday 3rd January 2012
The mixer provides new opportunities as it enables compact circuit technology, potential to reach high frequencies and integration with silicon technology
Wednesday 28th December 2011
Using a sandwiched sub-nano separator growth technique, indium arsenide / indium gallium arsenide quantum dots have been used to create a broad new band the 1.31-μm region
Friday 23rd December 2011
Scientists say they have developed a solar paint which can be made cheaply and in large quantities. If the efficiency can be improved, they may be able to make a real difference in meeting energy needs in the future
Friday 23rd December 2011
The "MacEtch" wet etch solution ensures that only the areas touching metal are etched away, and high-aspect-ratio structures are formed as the metal sinks into the wafer. After etching , the metal can be cleaned from the surface without damaging it
Thursday 22nd December 2011
These findings may lead to the development of ultra-high-speed transistors and high-efficiency photovoltaic cells using gallium arsenide
Tuesday 20th December 2011
Studies on electric friction in gallium arsenide could be useful in the future for designing more efficient and faster electronics and finding new tricks to reduce electrical resistance
Friday 16th December 2011
Researchers from NREL have developed a solar cell using PbSe quantum dots which exhibits multiple exciton generation
Wednesday 30th November 2011
Gallium nitride nanowires grown by PML scientists may only be a few tenths of a micron in diameter, but they promise a very wide range of applications, from new LEDs and diode lasers to ultra-small resonators, chemical sensors, and highly sensitive atomic probe tips.
Monday 28th November 2011
Researchers at the University of Delaware have explored novel methods for assembling indium arsenide quantum dots for use in next generation computing devices and solar energy capture.
Tuesday 15th November 2011
The nanoscale devices which incorporate small islands of indium arsenide, are claimed to be ultrafast and a thousand times more energy efficient than laser-based devices.
Tuesday 15th November 2011
Nestling quantum dots in an insulating egg-crate structure enables optimisation for quantum-dot LEDs according to researchers in the U.S.
Wednesday 9th November 2011
The geometry of the indium gallium arsenide nanowires provides the additional benefit of enhancing solar cell performance through greater light absorption and carrier collection efficiency.
Tuesday 8th November 2011
Contrary to conventional ideas, researchers say they have demonstrated that the key to boosting solar cell efficiency is not in absorbing more photons, but emitting more photons.
Tuesday 8th November 2011
The new approach means that an optical fibre taper waveguide captures some of the larger fraction of the gallium arsenide quantum dot’s emission which is trapped in the compound semiconductor.
Monday 7th November 2011
The new kids on the block, diode lasers, can produce high-quality white light using a four-colour laser source and could challenge LEDs for home and industrial lighting supremacy.
Friday 4th November 2011
Electrons that become trapped by certain imperfections in silicon carbide meet the requirements for use as a quantum bit.
Monday 31st October 2011
Recent findings have shown that GaN could be used to construct electrodes used in neurostimulation therapies for Alzheimer’s to transistors used to monitor blood chemistry.
Monday 31st October 2011
By using a piezoelectric material alongside a gallium nitride LED, the external efficiency can be amplified by a factor of more than four times.
Friday 14th October 2011
Physicists have developed lasers composed of a gallium arsenide membrane and indium arsenide quantum dots which mimic the nanostructure of bird feathers