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Lab & Fab


Thursday 30th November 2017
US team develops new class of cybersecurity primitives around the structural randomness of 2D semiconductor MoS2
Wednesday 29th November 2017
Perovskite-based device dynamically responds to sunlight by transforming from transparent to tinted while converting sunlight into electricity
Thursday 23rd November 2017
Michigan team use predictive modelling to show that adding boron to InGaN can keep electrons from becoming too crowded
Wednesday 22nd November 2017
Penn State and Princeton team report the first continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor
Tuesday 21st November 2017
LANL team takes critical step towards solution-processed laser diodes
Monday 20th November 2017
By removing p-doping and using quantum-mechanical tunelling, US team boosts lumens per watt in GaN-based LEDs
Wednesday 15th November 2017
New technology coul enable compact devices for telecommunications and security camera applications at even higher frequencies
Monday 13th November 2017
International team use graphene and transition metal dichalcogenide composite to achieve fine control over spin
Monday 13th November 2017
New materials for RF, GaN power conversion, and silicon photonics to feature at San Francisco conference in December
Saturday 11th November 2017
University of Twente researcher proposes using 'avalanche mode' silicon LEDs to efficiently bring light on-chip
Friday 10th November 2017
How to cut down energy loss in power electronics? The right kind of doping, according to researchers at Aalto University
Thursday 9th November 2017
Simple production steps could lower cost of producing sensors and other optoelectronic devices, say French researchers
Wednesday 8th November 2017
New hybrid architecture could prove essential for high-performance quantum photonic circuits
Tuesday 7th November 2017
Chromosol gets funding to commercialise erbium-based technology to build lasers on silicon photonic devices
Friday 3rd November 2017
Technology based on CsPbI3 delivers 13.4 percent efficiency
Tuesday 24th October 2017
Ultrathin films of MoTe2 that emit and detect light can be stacked on top of silicon wafers
Monday 23rd October 2017
By adding extra charge carriers, Los Alamos team block absorption and create transparency without external stimulation
Tuesday 10th October 2017
UC Riverside research invokes quantum mechanical processes that occur when two atomically thin materials are stacked together
Wednesday 4th October 2017
Heterointegrated components for subterahertz communications and power amplifiers for 5G will be featured in Munich, November 14-17
Tuesday 3rd October 2017
University awarded over £440k for its part in Visible Light Communications based Interoperability and Networking (VisIoN) project
Monday 2nd October 2017
Devices lost less than 5 percent performance in accelerated ageing tests
Friday 22nd September 2017
KAUST and Georgia Tech team show how boron-containing nitrides tune the band structures of nitride-based heterojunction with large conduction band offset
Tuesday 19th September 2017
Four year project aims to spur research, development and commercial adoption of new class of semiconductors that could lead to new uses for flexible displays.
Tuesday 19th September 2017
Results are major step towards direct III-V/Si epitaxy for integrating light sources on silicon