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Lab & Fab

Tuesday 25th March 2014
Superior thermal conductivity enables an output power hike for high-voltage LEDs
Tuesday 25th March 2014
Using InGaAs on InAs stems grown on graphene could benefit solar cell and laser technology
Tuesday 25th March 2014
Rhenium atoms have a relatively large atomic weight, which means electron spin-orbit interactions are significant
Thursday 20th March 2014
Superconductivity and LED technology could provide a new approach to quantum devices
Wednesday 19th March 2014
Scientists have reported that adding phosphonic groups increases luminescence and enhances the stability of the gallium nitride based devices
Tuesday 18th March 2014
Carbon anti-site vacancy pairs in SiC are sufficiently bright to allow detection at the single-photon level enabling the generation of single photons at a high repetition rate, This makes them potentially useful qubits for quantum information processing and applications in photonics
Tuesday 11th March 2014
More researchers have explored WSe2 and claim the material can make LEDs stronger and more energy efficient
Tuesday 11th March 2014
By making diodes using tungsten diselenide, researchers have shown it is possible to produce photodetectors, photovoltaic cells, and LEDs
Monday 10th March 2014
A hybrid formed from interfacing GaP with a cobaloxime catalyst could enable renewable solar fuels
Thursday 6th March 2014
Zero-dimensional gallium arsenide based quantum dots may someday have a big effect on solar energy and lasers
Wednesday 5th March 2014
By 2020 it is predicted that LEDs will have captured between 88 and 90 percent of the lighting market. Applied to a smaller surface capable with GaN, it is possible to make switching cheaper
Tuesday 4th March 2014
Using GaMnAs, researchers have demonstrated a new principle for magnetic recording
Monday 3rd March 2014
Scientists have created a transformative device using GaN, GaAs and silicon which is aimed at delivering treatment or predict an impending heart attack before a patient shows any physical symptoms
Thursday 27th February 2014
A new quasiparticle by exciting gallium arsenide with an ultrafast red laser initially form excitons
Wednesday 26th February 2014
Scientists have designed onion-like structures to match light-trapping efficiency with the absorption efficiency of the semiconductor materials in thin film CdTe and CIGS solar cells
Wednesday 26th February 2014
SiGe and VCSELs combined could lead to a new era in short-range data transmission
Tuesday 25th February 2014
Gradual variation in quantum well composition promises to slash Auger rates in AlN/GaN LEDs
Thursday 20th February 2014
Growing III-nitride based quantum wells could enhance solid state lighting, low threshold lasers and high power LEDs
Wednesday 19th February 2014
The chips are based on III-V technology and include layers of GaAs
Wednesday 19th February 2014
The silicon-germanium technology could be used in cold-temperature applications such as in outer space, where temperatures can be extremely low
Tuesday 18th February 2014
Novel tunnel FET targets low power and radio frequency applications
Wednesday 12th February 2014
Researchers have examined the electron and nuclear spin order in gallium arsenide nanowires at temperatures of 0.1 kelvin
Friday 7th February 2014
Ballistic transport in graphene could result in a new class of room temperature coherent electronic devices which would be very different from what we make today in silicon
Wednesday 5th February 2014
A new technology enables the capture of high-energy photons more efficiently in CIS solar cells