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Lab & Fab

Friday 1st February 2013
Minute LED lights could deliver Wi-Fi-like internet communications
Thursday 31st January 2013
Early results using compound semiconductors and processes achieve a milestone towards low-power tunnel transistor electronics
Friday 25th January 2013
NIST's prototype carbon nanotube device is a silicon chip topped with circular mats of carbon nanotubes standing on end
Monday 14th January 2013
The devices are believed to exhibit the lowest specific contact resistivity (rc) ever reported for CMOS-compatible non-gold ohmic contacts for conventional gallium nitride HEMTs on a silicon substrate
Thursday 10th January 2013
Recent research demonstrates the feasibility of achieving high performance III-nitride HEMTs on 8 inch diameter Silicon (111) for high-frequency and high-power device applications
Wednesday 9th January 2013
By depositing a layer of light-sensitive material on top of a GaN (gallium nitride) LED and creating a triangular factory-roof profile with a laser increases LED efficiency by 55 percent
Monday 7th January 2013
By creating a silicon vacancy defect in silicon carbide, scientists have generated additional energy levels in the so band gap for use in supercomputers
Tuesday 1st January 2013
NREL researchers offer insights into the progress of record-breaking multi-junction cells
Tuesday 18th December 2012
Using a simple nitridation process, it is now possible to grow up to 25nm thick polar InN films with the surface Fermi level close to the valence band maximum. Substrates used include silicon (111) and GaN (0001)
Tuesday 18th December 2012
The integration of an indium phosphide chip with a silicon chip could be the key to faster and more powerful terahertz devices for high resolution and mobile applications
Wednesday 12th December 2012
New developments using graphene are suited for use in field-effect transistors. But if researchers are able to lower the temperature, they may be able to use graphene in optoelectronic products
Monday 10th December 2012
Indium gallium arsenide transistors could snatch silicon’s crown
Thursday 6th December 2012
Indium gallium arsenide is one of the several promising semiconductors being studied to replace silicon
Wednesday 5th December 2012
Indium gallium arsenide is one of the several promising semiconductors being studied to replace silicon
Tuesday 27th November 2012
Scientists say that cadmium selenide nanocrystal devices can move electrons 22 times faster than in amorphous silicon
Tuesday 27th November 2012
A tuneable material using sapphire and vanadium dioxide developed at Harvard boasts nearly 100 percent absorption on demand
Tuesday 20th November 2012
Using a novel molten droplet method to make lava dots out of zinc sulphide, cadmium sulphide and zinc selenide, hollow particles can exceed some performance metrics of quantum dots in a solar-cell test device
Monday 19th November 2012
A new technique could potentially allow the fabrication of entire integrated circuits from graphene without the need for interfaces that introduce resistance
Monday 19th November 2012
Fraunhofer ISE has explored the limits of a new technology with gallium nitride power transistors
Tuesday 13th November 2012
Using multiple tiers of indirect bandgap semiconductors, such as silicon and germanium, it is claimed that efficiencies of 40 percent can be reached
Thursday 25th October 2012
Indium arsenide QDs offer a better alternative to gallium arsenide and may allow quantum researchers to manipulate a large number of qubits, enough for a practical machine
Wednesday 17th October 2012
By doping gallium arsenide with manganese, researchers have unlocked some ferromagnetic secrets of promising materials for computing
Wednesday 17th October 2012
Laser cooling achieved with gallium nitride could enable scientists to observe novel quantum effects and make the HEMTS used in satellites more resistant to damaging ultraviolet rays
Thursday 11th October 2012
As concentrated photovoltaic players Amonix and GreenVolts run into trouble, analysts predict a bright future for the solar technology. Compound Semiconductor talks to IMS Research to find out why.