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Tuesday 15th March 2011
Both GaN on silicon devices have many times superior switching performance compared to similar state-of-the-art silicon-based power MOSFETs. Both devices also have low on resistance and are smaller than silicon devices with similar resistance.
Tuesday 15th March 2011
Artimar has extensive experience in the semiconductor industry as an exclusive representative for high-technology and market-leading semiconductor manufacturers.
Tuesday 15th March 2011
The firm’s SnapLED now has ‘build out of the box’ capability for automotive applications and is designed to significantly reduce engineering and development costs.
Tuesday 15th March 2011
With the new appointment, the manufacturer of III-V based solar cells intends to drive cost out of the product and improve product quality.
Tuesday 15th March 2011
The provider of gases used in III-V compound semiconductor growth aims to expand its presence in Asia.
Monday 14th March 2011
The possibility of tuning the electronic and optoelectronic properties of nanowires becomes possible via strain engineering.
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Monday 14th March 2011
The expanded centre will house five labs. One of these will be The Wafer Process Lab (WPL), which serves the advanced material and compound semiconductor markets.
Monday 14th March 2011
The two companies, which supply etch and deposition systems, will extend their market reach in the areas of dedicated R&D systems, failure analysis and non-clustered platforms.
Monday 14th March 2011
The line-scan camera is suited for machine vision, sorting and solar inspection.
Monday 14th March 2011
The i-Spec is a portable spectrophotometer system equipped with silicon and InGaAs array detectors, allowing it to measure from as low as 350nm to as high as 2600nm.
Monday 14th March 2011
The companies hope to provide one-stop shopping and enhanced value to their customers, from boule-grinding, slicing, and orientation-fixing, through to mechanical polishing and CMP.
Friday 11th March 2011
The two systems were shipped to both government research and commercial entities and will be instrumental in the development of compound semiconductor device performance characterisation in Asia.
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Friday 11th March 2011
The board has approved a quarterly interim cash dividend of $0.08 per ordinary share.
Friday 11th March 2011
Strong equipment backlog reflects optimism of tier 1 PV producers and a new cycle of investment in emerging thin-film technologies such as CIGS.
Thursday 10th March 2011
The single stage mass filters can be used for many general applications, with the 3F-series triple-stage mass filter being used for the most demanding applications requiring maximum performance in terms of both mass resolution and abundance sensitivity.
Thursday 10th March 2011
The firm’s InP based optical transmission and vertically-integrated products support customers deploying 40G and 100G networks.
Thursday 10th March 2011
The firm will build a new 200MW CPV manufacturing facility which uses its III-V multijunction solar cell technology, in the San Diego region.
Thursday 10th March 2011
The revenue growth was driven primarily by demand for 40 Gbps transponders, wavelength selective switches (WSS) and ROADM line cards.
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Thursday 10th March 2011
In some parts of Beijing, LED modules for street luminaires with an output of 120W or 180W now replace the conventional 250W or 400W sodium vapour lamps, resulting in energy savings of up to 50%.
Thursday 10th March 2011
The research arm of Alcatel-Lucent showcased the InP photonic integrated circuits (PICs) at OFC and NFOEC in California.
Thursday 10th March 2011
The firm’s tunable transmitter optical subassembly (TOSA) features an internally designed tunable laser that delivers wavelength stability.
Thursday 10th March 2011
The departures are due to a re-organisation of the board resulting from the recent secondary offerings of the firm’s ordinary shares by its sponsor shareholders. The board has decided not to fill the vacancies created by their resignations.
Wednesday 9th March 2011
One of the technologies Alta is developing is ’epitaxial lift off ’which will enable efficient use of very thin layers of gallium arsenide for solar PV applications.
Wednesday 9th March 2011
The firm has demonstrated what it says is the industry's first commercial grade performance for a silicon-based LED. Optimisation of the epitaxy process on 8-inch silicon wafers will make LED manufacturing compatible with existing automated semiconductor lines.

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