The Canadian firm’s model 820 identifies 1550nm calibrated wavelength signals as well as 800nm to 1700nm wavelength signals. The identifier has two detachable InGaAs detectors and boasts a five-stage display of signal intensity.
Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.
Ultratech, a supplier of lithography and laser-processing systems used to manufacture semiconductor devices and high-brightness LEDs (HB-LEDs), today announced the opening of its Singapore international headquarters.
Verticle, Inc of Dublin, California has announced the world's first hexagonal LED chip. HoneycombTM LED Chip, named after its hexagonal shape, is a vertically structured LED chip developed especially for high power LED applications.
CEA-Leti, coordinator of the European HELIOS project to accelerate commercialization of silicon photonics, said today project partners demonstrated a laser and a 10Gb/s silicon modulator using a process that is compatible with complementary metal-oxide semiconductor (CMOS) processing.