EPC's latest eGaN FET targets Wireless Charging
Efficient Power Conversion (EPC) has introduced the EPC2037 as the newest member of EPC's family of enhancement-mode GaN power transistors (eGaN FETs).
The EPC2037 is a tiny 0.9 mm x 0.9 mm, 100VDS, 1A device with a maximum RDS(on) of 550mΩ with 5V applied to the gate. This GaN transistor delivers high performance due to its high switching frequency, low RDS(on), low QG and in a small package, according to EPC. This eGaN FET was designed to be driven directly from a digital logic IC thus eliminating the need for a separate driver chip.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance which does require a driver IC, the EPC2037 is much smaller and has many times superior switching performance, says EPC. In addition to wireless charging, circuit applications that benefit from this eGaN FET's performance include high frequency DC-DC conversion, LiDAR/pulsed power, and class-D audio amplifiers.
To simplify the evaluation process of this eGaN FET, the EPC9051 development board is available to support easy in circuit performance evaluation of the EPC2037.
