The two new power amplifiers (PAs) are based on the firm’s proprietary 0.25 micron GaAs enhancement-mode pHEMT technology. They deliver high linearity and low power dissipation in an industry standard package and will enable a single design to support multiple frequencies and markets.
Each 150 mm wafer produces four times the number of LEDs as the current 3-inch wafers. The transition to a larger wafer size is critical to provide the increasing volume of LEDs required by the lighting industry and ensuring a supportable and secure supply chain.
The company has broadened its product line with the flexible SFX3 CIGS module up to 260W, which has recently achieved IEC 61646 and IEC 61730 certifications through TUV SUD America and the ETL Mark certification to the UL 1703 standard through Intertek.
The firm’s LEDs are used in luminaires which light up NBC’s ‘America’s Got Talent’. Kieran Healy, lighting designer for the program commented “The entertainment industry now has remarkable, next-generation lighting. It truly exceeds all my expectations.”
The complete easy-to-use kit enables developers to leverage C2000 real-time control microcontrollers to innovate feature-laden, intelligent automotive and stage lighting applications. The kit offers flexibility for lighting systems that require a variety of LED types and string lengths.
The firm has won a Phase I SBIR award entitled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” in support of future Venus exploration missions.