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Wednesday 29th October 2008
The Japanese technology company has developed a simple package for its highly integrated PHEMT sensor to ease radar module production.
Tuesday 28th October 2008
Lower revenue in 2009 than 2008 and job losses are on the cards as the credit crunch and a glut of Asian fabs combine to vex the MOCVD tool company.
Tuesday 28th October 2008
The Japanese steel expert claims the first commercial bulk SiC production technique based on solution chemistry, with its eye on post-silicon power electronics.
Monday 27th October 2008
Green emitters look set to benefit from TDI's epitaxy process, which relies on its precursor chemicals to help keep InGaN stable.
Monday 27th October 2008
The GaAs chip maker will focus on cutting outgoings through the rest of 2008 and is targetting a sales resurgence in a year's time, once it has regained credibility.
Monday 27th October 2008
The GaAs and InP laser manufacturer has reported record quarterly sales, and expects the credit crunch to bring more consolidation in optical communications.
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Friday 24th October 2008
With transistors it believes are more efficient than any rivals, Fujitsu continues to push GaN power and efficiency into the marketplace.
Thursday 23rd October 2008
Three is definitely the magic number for the GaAs firm, but overachieving in the last quarter will lead to a drop in this period's revenues.
Wednesday 22nd October 2008
The GaN LED maker invests up to $18 million to boost output over the next quarter.
Tuesday 21st October 2008
Innovative semiconductor laser company QPC Lasers sheds employees as it searches frantically for new financing amid the global credit crunch.
Tuesday 21st October 2008
Energy conversion efficiency of 12% could see thermo-photovoltaic devices move into new markets and products.
Tuesday 21st October 2008
Chip failure analysis expert MuAnalysis highlights the limitations of using low thermal conductivity silicon as a substrate for GaN HEMTs.
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Tuesday 21st October 2008
LEDs top the list of proposed acceptable energy-efficient lighting technologies, projected to save Europe 78 TWh/year in energy after incandescents are banned.
Monday 20th October 2008
Researchers embedded InAsSb quantum dots emitting at 1.5 microns into a GaAs 3D photonic crystal for the first time.
Friday 17th October 2008
A carrier-injecting AlN layer enables reliable 126W GaN transistors for economical high-power, high-frequency wireless communication.
Friday 17th October 2008
The equipment maker says projection alignment lithography could help LED makers improve yields, and has 1600 systems installed in silicon fabs to back its claim.
Wednesday 15th October 2008
A Yale professor has developed an NMOS-based technology that avoids the problems of low hole mobility, and high power consumptions at standby that dogged previous incarnations.
Tuesday 14th October 2008
Phonon-assisted Auger recombination is the most likely cause of LED droop, according to a partnership between Osram, Philipps University Marburg, and the University of Arizona.
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Monday 13th October 2008
The tunable wavelength laser business has become overcrowded according to the French InP fab, as its former owner Avanex closes a center working in this market.
Friday 10th October 2008
Accelerating the GaN chip ramp for LED luminaires, Zumtobel and Cree's collaboration is looking to quickly expand on its 50,000 annual sales target for downlights.
Thursday 9th October 2008
"Electron overflow" contributes to the decrease in efficiency at high currents, according to experiments on LED test structures with an additional quantum well.
Thursday 9th October 2008
The massive Smart Lighting center looks set to receive up to $50m in its first ten years from government and industrial backers.
Wednesday 8th October 2008
The Japanese firm has made a 450 mW laser for the Blu-ray recorder market, where diode power is closely related to market share.
Wednesday 8th October 2008
Industry group calls for urgent commitment from the European Union and individual governments to six recommendations outlined in its white paper.

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