Coinciding neatly with conference season, Technology and Devices International is attaining more firsts with its HVPE grown InGaN - the first top-quality LEDs from the material made using the faster deposition technique, in this case.
Aixtron sells tool for first plastic electronics plant; Cree plans to triple white XLamp capacity; Intense will develop laser diodes for the European Space Agency; Raytheon gains top “trusted” defense status in US; XenICs brings out a multiplexed IR detector.
Building on their previous development of a hybrid InP/silicon laser structure, researchers from Intel and the University of California, Santa Barbara, demonstrate a similar device with pulse characteristics suitable for ultrafast optical communications.
Buoyed by a strengthening market for RF components used in high-end wireless applications and a new deal with key customer Anadigics, epiwafer supplier IQE posts an operating profit and a sharp increase in sales.
More consolidation in the RFIC sector, as TriQuint Semiconductor expands its product portfolio and acquires a wide-bandwidth chip technology that could greatly simplify power amplification in wireless networks.
The global industrial giant has coupled FETs and Schottky diodes based on the robust compound semiconductor materials, forming a gas detector for harsh environments that it says beats existing solutions.
JDSU claims brightest 808 nm diode laser; Microsemi and Semisouth agree to cooperate on SiC wafers; Nichia settles lawsuit with UK retailer Argos; Seoul Semiconductor successfully defends white LED patent.