News Article

Freescale Launches GaAs LNA For Optimal Receiver Performance

The low noise broadband gallium arsenide based amplifier is suited for small cell and macrocell transceivers and applications requiring high linearity and high RF output power
Freescale Semiconductor has introduced a new enhancement-mode pHEMT low noise amplifier (LNA) based on GaAs process technology.

It is designed to optimise receiver performance for a broad array of wireless systems operating between 700 and 1400 MHz. Typical applications include small cell and macrocell transceivers, as well as a range of applications requiring extremely low noise figures, high linearity, and high RF output power.

The noise figure of the MML09231H is 0.36 dB at 900 MHz, making it a top-performing LNA in its frequency range, while maintaining one of the lowest noise figures of any small signal device in the industry.

This performance level is ideal for receiver designers, because it can boost product sensitivity to very low-level signals.

What's more, the MML09231H has an output third order intercept point (OIP3) of 37.4 dBm at 900 MHz delivering the high linearity required by today’s wireless systems.

The new Freescale LNA can tolerate a maximum input signal of +20 dBm, has an RF output peak power of +24.5 dBm (280 mW), high reverse isolation of -21 dB, small-signal gain of 17.2 dB (externally adjustable), and current consumption of only 55 mA from a single 5 Vdc supply.

Its features include an integrated power-down pin, active bias control for maintaining constant current, unconditional stability over temperature, and low external component count.

The MML09231H is now in full production. A reference test fixture is available for quick evaluation. For sampling and pricing information, please contact Freescale Semiconductor, a local Freescale sales office, or an authorised distributor.

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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

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So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.



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