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Wednesday 18th December 2013
With EpiTriple TT and AbsoluT, temperature calibration of all three heating zones of an MOCVD showerhead reactor can be achieved
Wednesday 18th December 2013
The company has launched a media campaign targeting the southern California region
Wednesday 18th December 2013
The developer of optical inspection tools for the semiconductor industry is being backed by Founders Fund and taken on Peter Thiel in its Board of Directors
Wednesday 18th December 2013
A single-particle study identifies a possible path to improved conversion of sunlight to electricity in photovoltaic devices and LEDs
Wednesday 18th December 2013
The partnership focuses on advanced engineered substrates and materials for LEDs and solar cells
Monday 16th December 2013
While technical progress is still the greatest challenge, China's chip market is dominated by LEDs
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Friday 13th December 2013
Researchers have demonstrated an InGaAs/GaAsSb broken-gap tunnel field effect transistor where the energy barrier was close to zero
Friday 13th December 2013
The Riber MBE412 system sold to the IES offers a technique for processing 4-inch substrates for the controlled development of III-V semiconductor-based nanostructures
Thursday 12th December 2013
Researchers at Northeastern University have grown GaN nanowires which represent a breakthrough in processing them for these novel uses
Thursday 12th December 2013
The two companies have signed an agreement which includes a technology license granted by Soitec to IntelliEPI. The agreement may be extended to address future business opportunities in the GaAs market, including equipment transfer
Wednesday 11th December 2013
Customers in the North Central of the U.S. will benefit from a representative agreement
Wednesday 11th December 2013
The situation is changing rapidly as advancements in CPV technology reduce costs
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Wednesday 11th December 2013
SMART Low Energy Electronic Systems Group will leverage EVG 850LT in advanced compound semiconductor research for wireless ICs, power electronics, LEDs and other applications
Wednesday 11th December 2013
LEDs continue to dominate the optoelectronic components market
Wednesday 11th December 2013
The firm's replacement process on 300mm silicon wafers envisages a possible evolution of the FinFET/trigate architecture for 7 and 5nm CMOS technologies
Wednesday 11th December 2013
Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve unprecedented longevity and efficiency
Wednesday 11th December 2013
Soraa founder Nakamura honoured for GaN LED technology
Tuesday 10th December 2013
Driven by a virtuous cycle of falling prices, policy support, and energy goals, LEDs' share of lighting in China will nearly double to 18 percent in four years, Lux Research says
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Monday 9th December 2013
The InGaAs/GaAsSb FET technology shows a potential use in high performance devices that operate with a very low power consumption and voltages to enable the 'Internet of Things'
Monday 9th December 2013
The company will develop environmental improvements to capture arsenic from its ore bodies that can be used in the development of gallium arsenide (GaAs)
Friday 6th December 2013
The ChromaLit Linear phosphor component is powered by III-nitride based blue LEDs and enables fluorescent replacement in commercial and industrial lighting
Friday 6th December 2013
III-V nanowires could potentially be used in multiple applications if several problems are overcome. These applications include silicon-on-chip optical interconnects, optical transistors, integrated optoelectronics for telecoms, laser arrays and bbiological and environmental sensing
Thursday 5th December 2013
The company will take on three new Board members, while three of its current members will either retire or not stand for re-election
Thursday 5th December 2013
The new fully automated production line has an option to extend to a total of 100 MWp

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