Loading...
News Article

STMicroelectronics introduces MasterGaN2

News

Extends MasterGaN family with new device optimised for asymmetrical topologies

Building upon the advantages of STMicroelectronics’ MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric GaN transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies.

The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimised gate driver, making GaN technology as easy to use as ordinary silicon devices. By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 further extends the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback.

The MasterGaN power system-in-package (SiP) family combines the two GaN HEMTs and associated high-voltage gate drivers in the same package with all necessary protection mechanisms built-in. The designer can easily connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device. The inputs are compatible with logic signals from 3.3V to 15V, which helps simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly. This integration helps raise the power density of adapters and fast chargers.

G aN technology is driving the evolution toward fast USB-PD adapters and smartphone chargers. ST’s MasterGaN devices enable these to become up to 80 percent smaller and 70 percent lighter, while charging three times faster compared to ordinary silicon-based solutions.

The built-in protection comprises low-side and high-side under-voltage lockout (UVLO), gate-driver interlocks, a dedicated shutdown pin, and over-temperature protection. The 9mm x 9mm x 1mm GQFN package is optimised for high-voltage applications, having over 2mm creepage distance between high-voltage and low-voltage pads.

MasterGaN2 is in production now, priced from $6.50 for orders of 1000 pieces.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: