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Wednesday 27th February 2013
A novel spin technique has allowed scientists to move closer to creating what they say is the first viable high-speed quantum computer
Wednesday 27th February 2013
The silicon carbide junction transistors will increase conversion efficiency and reduce the size, weight and volume of power electronics
Tuesday 26th February 2013
The tools, which will be used to manufacture GaN (gallium nitride) UHB LEDs, shows great endorsement of previously ordered AIX G5 systems
Tuesday 26th February 2013
Reihard's initial focus will be on growing sapphire material and the ASF equipment business which is primarily used by the LED industry
Tuesday 26th February 2013
The firm's newest products include GaAs (gallium arsenide) - and silicon-based power amplifiers and transmit modules
Tuesday 26th February 2013
The website, focused exclusively on gallium nitride, includes GaN products from Empower RF Systems, M/A-COM Technology Solutions, Microsemi, Nitronex, TriQuint, and UMS
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Tuesday 26th February 2013
With a new appointment and distribution agreement, the company is extending its presence in China
Monday 25th February 2013
The HVPE system is expected to lower the cost of III-nitride LED production and accelerate adoption in lighting and power electronics
Monday 25th February 2013
The provider of sapphire substrates and products to the LED, RFIC, semiconductor, and optical industries saw strong demand for six-inch polished wafers in the quarter, particularly from the LED market
Monday 25th February 2013
A new technology is expected to contribute to the optimisation of the doping process of silicon carbide. The SC-XAFS techniques could also be applied to the analysis of other wide-gap semiconductors such as GaN (gallium nitride)
Monday 25th February 2013
The firm has has added multiple new products to its portfolio of envelope tracking (ET) power management and gallium arsenide (GaAs) power amplifier solutions.
Friday 22nd February 2013
The manufacturer of plasma etch, strip and deposition systems for critical surfaces in the semiconductor and related industries has signed an agreement with S3 Alliance. S3 will work with R&D, MEMS and production fabs
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Friday 22nd February 2013
The new WTR1625L and RF silicon front end chips harness radio frequency band proliferation, enabling OEMs to develop thinner, more power-efficient devices with global 4G LTE mobility
Friday 22nd February 2013
The new indium gallium phosphide based power amplifier is suited to WCDMA / LTE applications for picocells, enterprise-class femtocells, and CPE
Friday 22nd February 2013
The III-nitride LED innovator is continuing to drive the adoption of LED lighting with higher lumen outputs, new aperture and expanded options
Thursday 21st February 2013
The orbital-built satellite will use the firm's BTJ triple-junction III-V solar cells delivering 3,750W of power at the end of life
Thursday 21st February 2013
Following a management buyout, Albis Optoelectronics is resurfacing as one of the renowned industry brands for high performance indium phosphide photodetector products
Thursday 21st February 2013
The partnership is aimed at developing and marketing re-useable gallium nitride substrates for high-performance LED lighting applications
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Wednesday 20th February 2013
The firm's shares fell 0.39 percent to trade at $45.54 on Tuesday. Over the past year, the stock has been trading between $22.25 and $46.88
Wednesday 20th February 2013
With the gallium nitride power amplifier, the two firms have established a new Industry standard with significant energy and carbon footprint reductions
Wednesday 20th February 2013
The novel temperature sensing solution for MOCVD gallium nitride-based epitaxy provides true wafer surface temperature and reflectance instrumentation to improve efficiency and yield in the LED industry
Tuesday 19th February 2013
The firm used its indium phospide based DTN-X platform and worked with FSUE ZNIIS to perform the super-channel trial
Tuesday 19th February 2013
The silicon based CMOS power amplifiers, which use envelope tracking, boost the linearity, efficiency and output power for CMOS PAs beyond the performance of gallium arsenide PAs
Tuesday 19th February 2013
VI Systems has worked with the American university to develop a VCSEL which is suited for use in the next generation of datacom and computercom standards

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