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Wednesday 10th July 2013
The demand for flexible, high-volume manufacturing solutions in 3the power device and compound semiconductor markets are partly driving growth at the company
Tuesday 9th July 2013
The award is in recognition of outstanding contributions that Corbett and his team have made in the field of Photonics and Material Science over a number of years
Tuesday 9th July 2013
The firm's new products will help semiconductor device and wafer manufacturers detect certain key contamination levels, and clean and maintain control of their fluids to enhance yields
Tuesday 9th July 2013
Future Lighting Solutions’ marketing and technical expertise along with Bridgelux’s LED technology portfolio is expected to accelerate the worldwide transformation to solid-state lighting
Tuesday 9th July 2013
Passing light through platelets of a special material incorporating cadmium telluride and silicon nitride and applying a magnetic field can rotate the polarisation direction of light
Tuesday 9th July 2013
Using envelope tracking, these devices reduce power consumption to extend battery life
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Tuesday 9th July 2013
Technological centre TECHNOPOLIS is to develop high-efficiency multi-junction gallium arsenide based solar cells
Monday 8th July 2013
The firm's gallium nitride based LEDs will be one of the products distributed by Mouser
Monday 8th July 2013
Air Products will collaborate with SEMATECH's engineers to better understand the underlying principles responsible for the deposition of III-V structures
Monday 8th July 2013
Unique configurations improve process control, lower CoO, and bring higher throughput
Monday 8th July 2013
The PV Roadmap aims to identify common challenges and define the areas of technical developments needed to sustain and advance a competitive U.S. photovoltaics market
Friday 5th July 2013
The firm says its 750 lumen LED module is the industry's first integrated module for residential downlighting
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Friday 5th July 2013
Going public on the stock exchange, trading of Osram Licht AG shares will commence on July 8th, 2013, under the ticker symbol “OSR”
Thursday 4th July 2013
Unlike CIGS, CZTS and CZTSe do not suffer from abundancy issues. Under certain conditions, the CZTS and CZTSe bandgaps make a combined material system that are ideal for a multi-junction, thin-film solar cell that rivals the efficiency of CIGS cells
Thursday 4th July 2013
The university has filed a patent against the consumer electronics giant. The patent relates to a method of growing insulating monocrystalline gallium nitride thin films using MBE
Thursday 4th July 2013
The firm's indium phosphide PICs will be used in delivering 10, 40 and 100 Gigabit Ethernet (GbE) services
Thursday 4th July 2013
The firm's gallium nitride substrates will allow for GaN-on-GaN growth. This will result in devices that have double the thermal conductivity and 100-1000 times fewer crystal defects than GaN grown on sapphire and silicon substrates
Thursday 4th July 2013
The combination of using a continuous flow reactor, which is much faster than batch mode synthesis, commonly used for CIGS, and the use of cheap environmentally friendly materials promises to cut costs
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Wednesday 3rd July 2013
The manufacturer of indium phosphide (InP) based photonic integrated circuits (PICs), has opened a new factory to cope with rising demands. NeoPhotonics will target high volume optical modules in cloud computing, broadband access, and 4G/LTE wireless networks
Wednesday 3rd July 2013
These gallium nitride-on-silicon HB LEDs are being designed into replacement products as well as architectural lighting, street lighting, commercial lighting and medical applications
Wednesday 3rd July 2013
The largest price reduction was in Taiwan, but the US also experienced a decrease
Tuesday 2nd July 2013
The 5 day conference will feature talks and presentations discussing many topics, including those using compound semiconductors. These will include InP telecoms, InGaAs imaging systems and photovoltaics
Tuesday 2nd July 2013
The manufacturing of the firm's CIS modules has resumed following the streamlining of all production at Solar Frontier's Kunitomi Plant in 2012
Tuesday 2nd July 2013
Both aluminium gallium arsenide DIE are fully passivated with silicon nitride (SiN) and incorporate 20 W absorptive and reflective Ka-Band switches

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