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Monday 4th March 2013
The company's QC3 diffractometer is suited for analysing III-V semiconductor and nitride based LEDs. The production worthy system can accommodate up to 20 wafers in a single measurement process
Friday 1st March 2013
Despite a turnaround in quarterly profits, reversing the loss of a year ago, the cadmium telluride cell manufacturer's shares fell 8 percent. This could be after the company remained tight-lipped about an earnings and sales outlook for 2013
Friday 1st March 2013
The gallium arsenide devices are suited to 38 GHz & 42 GHz applications
Friday 1st March 2013
European Photonic Industry Consortium (EPIC) president Drew Nelson will act as technology representative for the Photonics KET High Level Group. The group aims to foster the industrial deployment of European KETs in order to keep pace with main international competitors, restore growth, create jobs and help address today's major societal challenges
Friday 1st March 2013
The semiconductor expert will once again chair the premier conference for the compound semiconductor industry
Thursday 28th February 2013
In the future, the firm's cadmium telluride module will be optimised for volume manufacturing
Info
Thursday 28th February 2013
The combination of costs having fallen 50 percent in the last 18 months and the rising efficiencies of LED lamps means a boost in chip sales
Thursday 28th February 2013
The firm will exhibit its digital solutions for flow, vacuum and pressure measurement and monitoring at SEMICON China
Thursday 28th February 2013
The firm's 600V gallium nitride HEMTs employ patented EZ-GaN technology, achieving a vital milestone for broad adoption in power conversion
Wednesday 27th February 2013
Solar Junction's high efficiency III-V multi-junction solar energy cells combined with Amonix's ground breaking module technology will increase efficiencies while driving CPV costs down
Wednesday 27th February 2013
The developer of gallium nitride power switching semiconductors has set up a new office in response to increasing demands and a growing base of European partners
Wednesday 27th February 2013
The CurX UV-LED module is claimed to provide the highest irradiance available for UV printing and curing applications
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Wednesday 27th February 2013
The firm's indium gallium arsenide photodiodes are suited for signals from 900nm to 1700nm
Wednesday 27th February 2013
As part of a continued focus on sustainability, the US's largest retailer has selected energy-efficient LED lighting by Cree, to illuminate its Neighbourhood Market in Mt. Pleasant, Wisconsin
Wednesday 27th February 2013
A novel spin technique has allowed scientists to move closer to creating what they say is the first viable high-speed quantum computer
Wednesday 27th February 2013
The silicon carbide junction transistors will increase conversion efficiency and reduce the size, weight and volume of power electronics
Tuesday 26th February 2013
The tools, which will be used to manufacture GaN (gallium nitride) UHB LEDs, shows great endorsement of previously ordered AIX G5 systems
Tuesday 26th February 2013
Reihard's initial focus will be on growing sapphire material and the ASF equipment business which is primarily used by the LED industry
Info
Tuesday 26th February 2013
The firm's newest products include GaAs (gallium arsenide) - and silicon-based power amplifiers and transmit modules
Tuesday 26th February 2013
The website, focused exclusively on gallium nitride, includes GaN products from Empower RF Systems, M/A-COM Technology Solutions, Microsemi, Nitronex, TriQuint, and UMS
Tuesday 26th February 2013
With a new appointment and distribution agreement, the company is extending its presence in China
Monday 25th February 2013
The HVPE system is expected to lower the cost of III-nitride LED production and accelerate adoption in lighting and power electronics
Monday 25th February 2013
The provider of sapphire substrates and products to the LED, RFIC, semiconductor, and optical industries saw strong demand for six-inch polished wafers in the quarter, particularly from the LED market
Monday 25th February 2013
A new technology is expected to contribute to the optimisation of the doping process of silicon carbide. The SC-XAFS techniques could also be applied to the analysis of other wide-gap semiconductors such as GaN (gallium nitride)

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