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Thursday 16th May 2013
The firm's CdSe-CdS emitters are suited to applications such as electronic displays and solid-state lighting
Thursday 16th May 2013
Scientists have demonstrated an increased shelf life and improved nutritional quality of fresh produce with a new storage technology using ultraviolet aluminium gallium nitride (AlGaN) LEDs
Wednesday 15th May 2013
Silicon carbide three-phase power modules alleviate conventional design constraints. They are also claimed to be more reliable and cheaper than comparable silicon systems
Wednesday 15th May 2013
The high capacity makes the application suitable for use in MOCVD growth where other adsorbent materials are impractical
Wednesday 15th May 2013
The new appointment will strengthen the firm's CIGS technological and business capabilities
Monday 13th May 2013
The laser manufacturer's Chinese manufacturing facility has gained certification for its quality management and environmental management systems
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Monday 13th May 2013
The Cardiff headquartered firm, along with II-VI, has introduced large gallium nitride on silicon carbide substrates for power device applications
Monday 13th May 2013
The cadmium telluride (CdTe) solar cell manufacturer did however suffer due to the Topaz project
Monday 13th May 2013
The provider of sapphire substrates and products to the LED, semiconductor, and optical markets will exhibit its products at the Laser World of Photonics in Munich, Germany 21st Laser World of Photonics Show
Monday 13th May 2013
The innovator of optical communications and laser solutions has developed a range of laser diodes with high performance and brightness over an expanded wavelength range
Monday 13th May 2013
This move is part of an overall branding exercise to enable the group to enhance its customers’ experiences in each of its key markets
Sunday 12th May 2013
A novel 3 dimensional geometry based on gallium arsenide enables trapping more light than planar structures, such as silicon solar devices, and with less material
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Saturday 11th May 2013
Lumileds' latest innovation in mid-power III-nitride LEDs achieves up to 140 lm/W efficacy
Saturday 11th May 2013
The firm is alleging that Coherent has infringed patents essential for the precise micromachining of most materials used for microelectronics application lasers
Friday 10th May 2013
Oclaro Offers High-Power 638 nm, 150 mW Single-Mode Red Laser Diode in 3.8mm Package for Growing Laser Display Applications Single-transverse-mode design enables higher resolution of displayed images
Friday 10th May 2013
Oclaro, a tier-one provider of optical communications and laser solutions, have announced the release of the HL63163DG red laser diode at 633 nm wavelength providing 100 mW single-transverse-mode optical output power for the biomedical, inspection and measurement marketplace. The Oclaro HL63163DG red laser presents a compact alternative to existing bulky Helium-Neon (He-Ne) gas lasers that exhibit lower energy efficiency.
Friday 10th May 2013
International Rectifier Corporation has qualified and shipped products built on its gallium nitride (GaN)- based power device technology platform for a home theatre system manufactured by a leading consumer electronics company
Friday 10th May 2013
Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE system includes a reactor that is designed around a novel (patent pending) chamber and gas-injector, resulting in the highly efficient use of pre-cursor gases. The system has a capacity of 59 two-inch wafers with a future upgrade path to 72 two-inch or 20 four-inch wafers.
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Friday 10th May 2013
The firm's nitride LEDs have been used in the Arcola theatre to improve overall efficiency and quality
Friday 10th May 2013
The organisation says that the restriction of the use of indium phosphide and gallium arsenide would have a negative impact on the semiconductor industry and Europe as a whole. SEMI has also described a new directive which will bring down patent application costs
Friday 10th May 2013
The new tool can be used in the monitoring of MOCVD grown III-V compound semiconductors
Friday 10th May 2013
Despite an overall power electronics 2012 downturn, silicon carbide kept on growing
Thursday 9th May 2013
Technology breakthrough was accomplished by developing new processes
Wednesday 8th May 2013
Wide-bandgap transistor and diode growth potential is obscured by automotive qualification, explains Yole Développement’s Philippe Roussel, though PV inverter growth is a bright spot.

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