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Thursday 10th January 2013
The company hopes to meet the growing demands of III-V semiconductor companies by offering its growth, fabrication, testing and production facilities
Thursday 10th January 2013
Recent research demonstrates the feasibility of achieving high performance III-nitride HEMTs on 8 inch diameter Silicon (111) for high-frequency and high-power device applications
Thursday 10th January 2013
The III-nitride LED manufacturer has appointed Timothy Lin to serve as Chief Financial Officer on an interim basis while it searches for a permanent replacement
Thursday 10th January 2013
The acquisition will increase IQE's wireless market share substantially with Kopin Wireless' major customers Skyworks, AWSC, RFMD and TriQuint
Wednesday 9th January 2013
By depositing a layer of light-sensitive material on top of a GaN (gallium nitride) LED and creating a triangular factory-roof profile with a laser increases LED efficiency by 55 percent
Wednesday 9th January 2013
Firms in the LED and equipment market are still facing rapidly declining prices and waning demand and are finding it difficult to increase revenue and income. However, it's not all bad news - product development remains a bright spot
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Wednesday 9th January 2013
Using First Solar's CdTe (cadmium telluride) modules, the investment is aimed at advancing PV power plant projects in a sustainable market
Tuesday 8th January 2013
The firm's cadmium free copper indium selenide cell was cut from a 30cm x 30cm substrate, demonstrating the high possibility for further increases
Tuesday 8th January 2013
Tim Rebhorn will be responsible for the CdTe company's global project development strategy and execution
Tuesday 8th January 2013
The devices are built using the firm's advanced indium gallium phosphide HBT process
Tuesday 8th January 2013
The electronic component distributor will supply the firm's silicon carbide power devices globally
Monday 7th January 2013
The Oslon LEDs will be used to reduce energy, maintenance and accidents
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Monday 7th January 2013
The firms will unite to simplify and develop more cost-effective methods in LED lamp manufacture
Monday 7th January 2013
The provider of high-purity outsourced process tool parts, cleaning and surface treatment to the solar and LED industries has added quartz fabrication to its portfolio
Monday 7th January 2013
The program targets conversion efficiency gains beyond First Solar's cadmium telluride roadmap
Monday 7th January 2013
By creating a silicon vacancy defect in silicon carbide, scientists have generated additional energy levels in the so band gap for use in supercomputers
Monday 7th January 2013
The RFFM4501E is based on the firm's InGaP HBT and GaAs pHEMT technologies and is designed for notebook and mobile equipment devices
Friday 4th January 2013
Kobayashi has been acknowledged for his work in gallium arsenide (GaAs) MMIC and indium phosphide (InP) technology
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Thursday 3rd January 2013
The firm's board has agreed to award Dashen Fan up to 400,000 shares of restricted common stock
Thursday 3rd January 2013
Agostino Renna has been named president and CEO of GE Lighting Europe, Middle East & Africa
Thursday 3rd January 2013
The financing to the sapphire substrate manufacturer strengthens its liquidity position
Wednesday 2nd January 2013
The Korean firm was the only LED manufacturer who registered more than 10,000 patents, and was considered to be at the highest level in the industry in Patent Power
Wednesday 2nd January 2013
The partnership between the two firms will result in lower costs and increased equipment productivity in the competitive nitride LED market
Wednesday 2nd January 2013
Presentations included talks on Atomic Layer Deposition process and applications, an overview of plasma etch, PECVD & TEOS processes & nanoscale applications

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