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Thursday 21st March 2013
A NIST investigation has reported that almost 90 percent of green and about 44 percent of red pointers were out of compliance with federal safety regulations
Thursday 21st March 2013
The indium phosphide based telecom provider is now offering a hardware acceleration chip that enables recovery from multiple-failures in less than 50 milliseconds
Wednesday 20th March 2013
Equipped for wafer bow control, Laytec's latest EpiTT system incorporates a blue laser and triple wavelength reflectance for the precise monitoring of AlN interlayers, AlGaN buffer layers and multiple quantum wells
Wednesday 20th March 2013
Gallium arsenide device revenues have grown Y-o-Y in 2012 and although Skyworks and WIN Semiconductors are at the forefront, the silicon threat looms. This market has seen recent developments such as CMOS multi-mode, multi-band PAs and envelope tracking
Wednesday 20th March 2013
The manufacturer of III-V multi-junction solar cells used a Veeco MBE system to achieve critical milestones in developing a production-ready commercial cell
Wednesday 20th March 2013
Japanese firm Rohm has reduced power loss in its new silicon carbide device, making it ideal for 1200V/180A inverters
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Tuesday 19th March 2013
The new purifiers address the need for luminosity and cost control for III-nitride LEDs
Tuesday 19th March 2013
The firm has donated its cadmium telluride modules as part of the biennial 2013 Solar Decathlon Competition. This contest challenges students to use a holistic approach to design and engineer houses with net-zero energy consumption
Tuesday 19th March 2013
The company expects to phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in North Carolina
Monday 18th March 2013
The EML-TOSA device will help to downsize facilities and expand high-speed 40Gbps optical transmission networks
Monday 18th March 2013
The firm's new micro-ITLA is designed to offer improved performance for next generation coherent networks for 100 Gbps and beyond
Monday 18th March 2013
The etch solution for GaN, AlGaInP and PSS will offer HBLED production manufacturers high throughput coupled with excellent CoO
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Monday 18th March 2013
With 160 lumens-per-watt efficacy the module is suited for use in LED tubes, LED ambient lighting, downlighting and retrofit lamps. It provides a 30 percent increase in efficacy compared to Samsung's previous offering
Friday 15th March 2013
Platform enables cost-effective R&D of silicon photonic ICs for high-performance optical transceivers
Friday 15th March 2013
New Devices Could Deliver Significant Cost Savings to Power-Conversion Systems
Friday 15th March 2013
VICR, which incorporates InP (indium phosphide), is designed to improve signal-to-noise ratio and increase coincident channel count in 100G coherent systems
Friday 15th March 2013
The development board features a dedicated gallium nitride driver to facilitate the rapid design of high frequency switching power conversion systems using the EPC2016 eGaN FET
Friday 15th March 2013
The firm believes this is a major milestone for GaN power electronics as JEDEC qualification of gallium nitride-on-silicon. It will enable mass adoption price points for devices providing dramatically improved power efficiency
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Thursday 14th March 2013
The joint effort will enhance manufacturing and market analysis, key requirements for sustainable deployment of solar PV energy
Thursday 14th March 2013
Foundry Global Communication Semiconductors will provide the Canadian based firm with a complete range of indium phosphide wafer processing services. OneChip will also use IQE's epitaxial growth services to produce its InP PICs for the data centre interconnect and passive optical network markets
Wednesday 13th March 2013
The firm's fully integrated indium phosphide devices prevent the complicated steps required by CMOS silicon and VCSEL processess
Tuesday 12th March 2013
The AIX G5+ system will be used to grow gallium nitride on silicon for power supplies, PV inverters/power conditioners, motor drives, and electric vehicles
Tuesday 12th March 2013
Single chip ultra-violet LEDs combine high efficiencies with high output powers
Tuesday 12th March 2013
The tool will be used for research and development of various antimonide and arsenide-based III-V optoelectronic devices

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